一种抗总剂量辐照的新型PD SOI器件  

A PD SOI Device for Anti-Total Dose Irradiation

作　　者：李孟窈 刘云涛[1] 蒋忠林 LI Mengyao;LIU Yuntao;JIANG Zhonglin(The School of Information and Communication Engineering,Harbin Engineering University,Harbin 150001,P.R.China)

机构地区：[1]哈尔滨工程大学信息与通信工程学院,哈尔滨150001

出　　处：《微电子学》2021年第1期101-105,共5页Microelectronics

基　　金：黑龙江省自然科学基金资助项目(JJ2018ZR1021)。

摘　　要：提出了一种具有叠层埋氧层的新栅型绝缘体上硅(SOI)器件。针对SOI器件的抗总电离剂量(TID)加固方案,对绝缘埋氧层(BOX)采用了叠层埋氧方案,对浅沟槽隔离(STI)层采用了特殊S栅方案。利用Sentaurus TCAD软件,采用Insulator Fixed Charge模型设置固定电荷密度,基于0.18μm CMOS工艺对部分耗尽(PD)SOI NMOS进行了TID效应仿真,建立了条栅、H栅、S栅三种PD SOI NMOS器件的仿真模型。对比三种器件辐照前后的转移特性曲线、阈值电压漂移量、跨导退化量,验证了该器件的抗TID辐照性能。仿真结果表明,有S栅的器件可以抗kink效应,该PD SOI NMOS器件的抗TID辐照剂量能力可达5 kGy。A new gate type silicon on insulator(SOI) device with a laminated embedded oxygen layer was proposed. In the anti-total ionization dose(TID) reinforcement scheme for SOI devices, the buried oxygen scheme for buried oxide(BOX), and the special S-gate scheme for STI layer were adopted. Based on Sentaurus TCAD software and Insulator Fixed Charge model, the fixed charge density was set. Base on a 0.18 μm CMOS process, the TID effect simulation of the PD SOI NMOS was proposed, and three kinds of PD SOI NMOS simulation models of strip-gate, H-gate and S-gate was established. By comparing the transfer characteristic curves, the threshold voltage drift and the transconductance degradation before and after irradiation of three devices, the anti-TID irradiation performance of the device were verified. The simulation results showed that the device with S-gate could resist kink effect, and anti-TID radiation dose of the PD SOI NMOS devices could reach 5 kGy.

关 键 词：STI PD SOI NMOS 总剂量辐照 S栅体接触 KINK效应 

分 类 号：TN386[电子电信—物理电子学]