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作 者:刘繁[1] 翁俊[1] 汪建华[1,2] 周程 LIU Fan;WENG Jun;WANG Jian-hua;ZHOU Cheng(Key Laboratory of Plasma Chemistry and Advanced Materials of Hubei Province,Wuhan Institute of Technology,Wuhan 430205,China;Institute of Plasma Physics,Chinese Academy of Sciences,Hefei 230031,China)
机构地区:[1]武汉工程大学湖北省等离子体化学与新材料重点实验室,武汉430205 [2]中科院等离子体物理研究所,合肥230031
出 处:《表面技术》2021年第4期184-190,共7页Surface Technology
基 金:国家自然科学基金项目(51402220);湖北省教育厅基金项目(Q20151517)。
摘 要:目的在实验室自制的5 kW圆柱形单模微波等离子体化学气相沉积(MPCVD)装置上,系统研究各放电参数对等离子体的影响。方法采用模拟计算与实验调控相结合的方式,分析微波等离子体、基团的运动和分布与放电参数之间的关系。利用发射光谱诊断等离子体环境,同时,利用SEM和Raman对所沉积的金刚石膜的形貌和质量进行表征,以验证MPCVD装置的调控原则。结果气压和温度满足Tg=8/3P关系时,吸收功率密度可达最大。单独提高微波功率和工作气压,能很大程度地增强等离子体的电子密度及改善等离子体球的均匀性,而两者相互之间匹配升高能极大地增加等离子体的电子密度,同时激发更多Hα、Hβ、CH及C_(2)这类适合高质量金刚石膜沉积的活性基团。得到了MPCVD装置长时间稳定运行的等离子体稳定边界,并成功制备出高质量的金刚石膜。结论功率气压及温度相匹配可以提高吸收功率密度、等离子体密度及均匀性。在圆柱形装置稳定运行的边界条件下,能沉积得到较高质量的金刚石膜。This paper ains to systematically study the effects of discharge parameters on plasma in a 5 kW cylindrical singlemode microwave plasma chemical vapor deposition device.The relationship between the motion and distribution of microwave plasma and the discharge parameters was analyzed by means of simulation and experimental control.The plasma environment was diagnosed by way of the emission spectrum.Meanwhile,the morphology and quality of the diamond film deposited were characterized by SEM and Raman,so as to verify the regulation principle of MPCVD device.The experimental results showed that the absorption power density can reach the maximum when the pressure and temperature satisfied the relationship Tg=8/3P Increasing the microwave power and working pressure alone can greatly enhance the plasma electron density and improve the homogeneity of the plasma sphere,while increasing the matching between the two can stimulate more active groups such as Hα,Hβ,CH and C_(2),which are suitable for high-quality diamond film deposition.The plasma stable boundary of MPCVD device was obtained and the high quality diamond film was successfully prepared.The results of this paper provide a theoretical basis for plasma regulation in MPCVD devices.
关 键 词:微波等离子体化学气相沉积 等离子体 金刚石膜
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