纳米级线宽标准样片的设计与制备  

Design and Development of Nanometer Line Width Standard

作　　者：韩志国[1] 李锁印[1] 冯亚南[1] 赵琳[1] 吴爱华[1] HAN Zhiguo;LI Suoyin;FENG Ya'nan;ZHAO Lin;WU Aihua(The 13th Institute of CETC,Shijiazhuang 050051)

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《计算机与数字工程》2021年第4期664-668,共5页Computer & Digital Engineering

摘　　要：介绍了纳米级线宽标准样片的用途及其在校准扫描电子显微镜中存在的问题,设计了具有快速循迹结构的线宽标准样片,采用电子束光刻工艺制作了标称宽度为25nm~200nm的线宽样片。以50nm和200nm线宽为例对样片的线宽偏差、线边缘粗糙度、线宽均匀性和稳定性进行了考核。结果表明,标称值50nm~200nm的样片线宽值与设计值基本一致,线边缘粗糙度为1.9nm~2.0nm、均匀性为1.7nm~1.9nm,稳定性为0.06nm~0.6nm。The use of nanometer line width standard and the problems in calibrating scanning electron microscopes are intro⁃duced,a line width standard with a fast tracking structure is designed,and a nominal width of 25nm~200nm line width sample is de⁃veloped using electron beam lithography.Taking 50nm and 200nm line widths as examples,the line width deviation,line edge roughness,line width uniformity and stability of the samples are evaluated.The results show that the line width of the sample with a nominal value of 50nm~200nm is basically consistent with the design value,the line edge roughness is 1.9nm~2.0nm,the uniformi⁃ty is 1.7nm~1.9nm,and the stability is 0.06nm~0.6nm.

关 键 词：线宽标准样片 电子束 线宽偏差 线边缘粗糙度 均匀性 稳定性 

分 类 号：TB921[一般工业技术—计量学]