磁控共溅射法制备ZrRu 薄膜及其电学性能研究  

Preparation and Electrical Properties of ZrRu Thin Films Prepared by Magnetron Co-sputtering

作　　者：孟瑜 沈欢 宋忠孝[2] 畅庚榕[1] MENG Yu;SHEN Huan;SONG Zhongxiao;CHANG Gengrong(Shanxi Key Laboratory of Surface Engineering and Remanufacturing,Xi’an University,Xi’an 710065,China;State Key Laboratory for Mechanical Behavior of Materials,Xi’an Jiaotong University,Xi’an 710049,China)

机构地区：[1]西安文理学院陕西省表面工程与再制造重点实验室,西安710065 [2]西安交通大学金属材料强度国家重点实验室,西安710049

出　　处：《真空与低温》2021年第3期231-234,共4页Vacuum and Cryogenics

基　　金：陕西省科技计划项目(2020JQ-889,2018JQ5173);陕西省教育厅科技项目(19JS056);西安市科技计划项目(2019KJWL24);西安文理学院大创项目和科研团队(DC2019049、XAWLKYTD013)。

摘　　要：扩散阻挡层的选材是Cu互连工艺研究重点之一,目前在研的阻挡层中,由两种难熔金属组成的二元合金因具有与Si反应温度高、电阻率低、结晶温度高等优点,成为一类极具应用潜力的阻挡层材料。本文通过磁控共溅射技术在p型Si单晶基底上沉积ZrRu薄膜。利用X射线光电子能谱、X射线衍射、扫描电子显微镜和四点探针测试等表征手段对ZrRu合金膜的化学特性、物相结构、微观形貌和电学性能进行表征分析。研究结果表明,随Ru溅射功率增加,Ru原子百分比增加,薄膜的沉积速率由7.74 nm·min^(-1)增加到17.99 nm·min^(-1),当Ru溅射功率低于35 W时,薄膜为非晶或微晶结构;当Ru溅射功率为45 W时,薄膜逐渐转化为柱状晶结构,且尺寸均匀,表明通过Ru掺杂实现了对ZrRu薄膜微观结构的调控;薄膜电阻率随Ru溅射功率增加由192.2μΩ∙cm降低为53.5μΩ∙cm,表现出良好的电学性能。The selection of diffusion barrier materials is one of the key points of copper interconnection technology.Researches show that binary alloy composed of two refractory metals has become a kind of potential barrier layer material due to its high reaction temperature with Si,low resistivity and high crystallization temperature.In this paper,ZrRu thin films were deposited on p-type Si(100)substrates by magnetron co-sputtering.The chemical properties,phase structure,morphology and electrical properties of ZrRu alloy films were characterized by X-ray photoelectron spectroscopy,X-ray diffraction,scanning electron microscopy and four-point probe method.The results show that with the increasing Ru sputtering power,the deposition rate of the films increases from 7.74 nm·min^(-1) to 17.99 nm·min^(-1).When Ru sputtering power is lower than 35 W,the films are amorphous or microcrystalline state;when Ru sputtering power is 45 W,the microstructure of the films is altered gradually from amorphous to columnar crystalline structure with uniform size.It demonstrates that the microstructure of ZrRu films can be controlled by incorporating Ru atoms.The resistivity of the films decreases from 192.2μΩ·cm to 53.5μΩ·cm with the increasing Ru sputtering power,indicating good electrical properties.

关 键 词：磁控溅射 ZrRu薄膜 溅射功率 微观结构 电学性能 

分 类 号：O484[理学—固体物理]