15 kV/10 A SiC功率MOSFET器件设计及制备  

Simulation and Fabrication of 15 kV/10 A SiC Power MOSFET

作　　者：李士颜 杨晓磊 黄润华[1] 汤伟 赵志飞[1] 柏松[1] LI Shiyan;YANG Xiaolei;HUANG Runhua;TANG Wei;ZHAO Zhifei;BAI Song(State Key Laboratory of Wide-bandgap Semiconductor Power Electronic Devices,Nanjing Electronic Devices Insti-tute,Nanjing,210016,CHN)

机构地区：[1]南京电子器件研究所,宽禁带半导体电力电子国家重点实验室,南京210016

出　　处：《固体电子学研究与进展》2021年第2期93-97,共5页Research & Progress of SSE

基　　金：江苏省青年基金资助项目(SBK2021030242)。

摘　　要：报道了在150μm厚、掺杂浓度5.0×10^(14)cm^(-3)的外延层上制备15 kV/10 A超高压SiC功率MOSFET器件的研究结果。对器件原胞结构开展了仿真优化,基于材料结构、JFET区宽度和JFET区注入掺杂等条件优化,有效地提升了器件的导通能力,器件比导通电阻为204 mΩ·cm^(2),击穿电压大于15.7 kV,在漏极电压15 kV时,器件漏电流为10μA,漏电流密度为12μA·cm^(-2)。在工作电压1.7 kV、导通电流10 A条件下,开通时间和关断时间分别为140 ns和84 ns。The research results of 15 kV/10 A SiC power MOSFET fabricated by using a 150μm thick,5.0×10^(14)cm^(-3)doped drift epilayer were reported.Based on the simulation of drift epilayer,JFET width and doping of JFET region,the specific on-resistance of 15 kV SiC MOSFET was re⁃duced to 204 mΩ·cm^(2).The breakdown voltage of the device is higher than 15.7 kV,and the device shows a leakage current of 10μA,which corresponds to a leakage current density of 12μA·cm^(-2)at a drain bias of 15 kV.The power device shows fast switching characteristics with turn-on and turn-off time of 140 ns and 84 ns,respectively,at 1.7 kV supplied voltage and 10 A current.

关 键 词：SiC功率MOSFET 阻断电压 15 kV 比导通电阻 动态特性 

分 类 号：TN325.3[电子电信—物理电子学]