GaN基紫外光电探测器的材料制备及器件优化研究进展  

Research Progress of Material Preparation and Device Optimization of GaN-Based Ultraviolet Photodetectors

作　　者：朱彦旭[1] 李锜轩 谭张杨 李建伟[1] 魏昭 王猜 Zhu Yanxu;Li Qixuan;Tan Zhangyang;Li Jianwei;Wei Zhao;Wang Cai(Key Laboratory of Opto-Electronics Technology,Ministry of Education,Beijing University of Technology,Beijing 100124,China)

机构地区：[1]北京工业大学光电子技术教育部重点实验室,北京100124

出　　处：《半导体技术》2021年第5期337-348,共12页Semiconductor Technology

基　　金：国家重点研发计划资助项目(2017YFB0402803)。

摘　　要：紫外光在各领域应用广泛,制备高性能紫外光电探测器(UV PD)受到研究人员的重视。GaN作为宽禁带半导体材料,具有高电子迁移率、稳定的物理化学性质、高击穿电压、低暗电流和固有可见盲区的特点。GaN基UV PD具有制备工艺简单、体积小无需附加滤光系统、易于与其他材料集成等特点,表现出优异的紫外光探测性能。围绕GaN基UV PD,介绍了GaN材料在制备工艺上的研究进展;详细论述了常见结构GaN基UV PD最新结构的优化对器件性能的影响;介绍了基于表面声波、表面等离激元和场效应晶体管集成的新型GaN基UV PD;最后,对GaN基UV PD的发展趋势进行了展望。Ultraviolet light is widely used in various fields,and the preparation of ultraviolet photodetectors(UV PDs)with high performance has attracted the attention of researchers.As a wide bandgap semiconductor material,GaN has the characteristics of high electron mobility,stable physical chemical properties,high breakdown voltage,low dark current and inherent visible-blind area.GaN-based UV PD has the advantages of simple preparation process,small size,no additional filter system,easy integration with other materials and so on,showing an excellent ultraviolet detection performance.Based on the GaN-based UV PD,firstly,the research progress in the preparation process of GaN materials is introduced.Subsequently,the influences of the latest structural optimization of the common structural GaN-based UV PD on the device performance are discussed in detail,and several new GaN-based UV PDs based on the surface acoustic wave,surface plasmon and field effect transistor integration are introduced.Finally,the development trend of the GaN-based UV PD is prospected.

关 键 词：GAN 紫外光电探测器(UV PD) 器件优化 响应度 比探测率 

分 类 号：TN36[电子电信—物理电子学]