AlGaN/GaN非凹槽混合阳极SBD射频性能及建模  

RF Performance and Modeling of Recess-Free AlGaN/GaN Hybrid Anode Schottky Barrier Diode

作　　者：刘芷诫 郑英奎 康玄武[2] 孙跃 吴昊 陈晓娟[2] 魏珂[2] Liu Zhijie;Zheng Yingkui;Kang Xuanwu;Sun Yue;Wu Hao;Chen Xiaojuan;Wei Ke(University of Chinese Academy of Sciences,Beijing 100049,China;Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China)

机构地区：[1]中国科学院大学,北京100049 [2]中国科学院微电子研究所,北京100029

出　　处：《半导体技术》2021年第5期358-364,381,共8页Semiconductor Technology

基　　金：国家自然科学基金资助项目(61804172);国家重点研发计划资助项目(2017YFB0403000);广东省重点领域研发计划资助项目(2019B010128001)。

摘　　要：基于大功率微波输能的需求,制备了新型AlGaN/GaN非凹槽混合阳极肖特基势垒二极管(SBD)。对新型结构的器件进行了小信号建模,可用于微波输能电路设计。通过开路、短路去嵌结构法从小信号S参数中提取了器件的寄生电容、电感和电阻,结合去嵌后的S参数与直流I-V、C-V特性曲线提取了器件的本征参数。综合寄生和本征参数建立了器件的小信号模型,将模型仿真结果与器件的实测结果进行了对比,同时引入误差因子评估了模型的准确度。结果表明,在0.1~10 GHz内,回波损耗相对误差小于4.1%,插入损耗相对误差小于3.7%,验证了所提出模型的可行性和准确性。Based on the demand for the high-power microwave power transmission, a new type of recess-free AlGaN/GaN hybrid anode Schottky barrier diode(SBD) was prepared. Small signal model of the new structure device was carried out, and it could be used in the design of the microwave power transmission circuit. The parasitic capacitance, inductance and resistance of the device were extracted from the small signal S parameters through the open and short de-embedding structure method. The intrinsic parameters of the device were extracted by combining the de-embedding S parameters and the DC I-V and C-V characteristic curves. A small signal model of the device was established by integrating the parasitic and intrinsic parameters. The simulation results of the model were compared with the measured results of the device, and an error factor was introduced to evaluate the accuracy of the model. The results show that within 0.1-10 GHz, the relative error of the return loss is less than 4.1%, and the relative error of the insertion loss is less than 3.7%, verifying the feasibility and accuracy of the proposed model.

关 键 词：GAN ALGAN/GAN异质结 肖特基势垒二极管(SBD) 混合阳极 微波输能 

分 类 号：TN313.8[电子电信—物理电子学]