不同浓度的Mg掺杂β-Ga_(2)O_(3)薄膜的制备与研究  

Preparation and Study of Mg-doped β-Ga_(2)O_(3) Thin Films with Different Content

作　　者：杨子淑 段苹[1] 邓金祥[1] 张晓霞[1] 张杰[1] 杨倩倩[1] YANG Zi-shu;DUAN Ping;DENG Jin-xiang;ZHANG Xiao-xia;ZHANG Jie;YANG Qian-qian(Faculty of Science,Beijing University of Technology,Beijing 100124,China)

机构地区：[1]北京工业大学理学部,北京100124

出　　处：《真空》2021年第3期30-34,共5页Vacuum

基　　金：北京市自然科学基金(No.4192016)资助。

摘　　要：本文采用射频磁控溅射方法在石英和高阻硅衬底上制备纯茁-Ga_(2)O_(3)薄膜和不同掺杂浓度的Mg掺杂茁-Ga_(2)O_(3)薄膜,研究了薄膜的结构、光学和电学性质。X射线衍射测试结果表明,在我们的掺杂浓度内,Mg掺杂茁-Ga_(2)O_(3)薄膜没有出现其他晶相的衍射峰,随着Mg掺杂浓度变大,薄膜的(401)和(601)衍射峰强度变弱。使用X射线光电子能谱测试薄膜中各元素的结合能和化学态。紫外-可见透射光谱测试结果表明薄膜在测试波段平均透光率高达80%以上,薄膜的带隙宽度随着Mg掺杂浓度变大而变大。霍尔效应测试结果表明我们采用射频磁控溅射方法制备的Mg掺杂茁-Ga_(2)O_(3)薄膜的导电类型为p型,载流子浓度由3.76×10^(10)cm^(-3)增加到1.89×10^(13)cm^(-3),说明Mg掺杂茁-Ga_(2)O_(3)薄膜是一种很有潜力的p型半导体材料。In this paper,the pureβ-Ga_(2)O_(3)thin film and Mg-dopedβ-Ga_(2)O_(3)thin films with different Mg content were deposited on the Si and quartz substrates by radio frequency magnetron sputtering.The structure,optical and electrical properties of thin films were studied.The X-ray diffraction measurement results show that,there was no diffraction peak corresponding to other crystal phases for Mg-dopedβ-Ga_(2)O_(3)thin films within our Mg content.And the intensities of diffraction peaks(401)and(601)of thin films weaken with the increase of Mg content.The X-ray photoelectron spectroscopy was used to test the binding energy and chemical states of the elements of the film.The UV transmission measurement results show that the average transmittance of the thin films is more than 80%in the test range,and the band gap of the thin films increases with the increase of Mg content.The Hall measurement results show that the conductivity type of Mg-dopedβ-Ga_(2)O_(3)thin film by radio frequency magnetron sputtering is p-type,and the carrier concentration increases from 3.76×10^(10)cm^(-3)to 1.89×10^(13)cm^(-3).The Hall measurement results indicate that Mg-dopedβ-Ga_(2)O_(3)thin film is a potential p-type material.

关 键 词：射频磁控溅射 Mg掺杂β-Ga_(2)O_(3)薄膜 带隙宽度 P型掺杂 

分 类 号：O484.4[理学—固体物理]