工艺参数对硫化锌薄膜光学性能和结晶特性的影响  

Effects of Process Parameters on Optical Properties and Crystallization Characteristics of Zinc Sulfide Films

作　　者：李坤[1] 熊玉卿[1] 王虎[1] 何延春[1] 王兰喜[1] 周超[1] 周晖[1] LI Kun;XIONG Yu-qing;WANG Hu;HE Yan-chun;WANG Lan-xi;ZHOU Chao;ZHOU Hui(Science and Technology on Vacuum Technology and Physics Laboratory,Lanzhou Institute of Physics,Lanzhou 730000,China)

机构地区：[1]兰州空间技术物理研究所真空技术与物理重点实验室,兰州730000

出　　处：《表面技术》2021年第6期184-192,共9页Surface Technology

基　　金：装备预研重点实验室基金项目(6142207190407)。

摘　　要：目的研究离子源偏压和沉积温度的变化对硫化锌薄膜光学性能和结晶性能的影响规律。方法采用电子束蒸发技术,在K9玻璃基片上制备了硫化锌薄膜。采用分光光度计测试了薄膜的光学性能,利用光谱反演法得出薄膜的折射率和消光系数随波长的变化规律。采用X射线衍射法测试薄膜的结晶状态。结果随着离子源偏压的增加,薄膜折射率逐渐减小,但变化幅度不大,当离子源偏压为160 V时,1000 nm波长处的薄膜折射率达到最小值2.210。开启加热之后,薄膜折射率显著提高,且随着沉积温度的升高,薄膜折射率逐渐增大,沉积温度为210℃时,1000 nm波长处薄膜折射率达到最大值2.312。两种工艺参数下制备的薄膜,其消光系数均很小。单纯的离子源辅助沉积时,薄膜生长择优取向是(220)晶向,而基底加热状态下沉积的薄膜生长择优取向是(111)晶向。随着离子源偏压增加,薄膜(220)峰的衍射强度降低。沉积温度越高,薄膜(111)峰的衍射强度越大。结论硫化锌薄膜的光学特性对沉积温度的变化更为敏感,离子源偏压和沉积温度的改变均能显著影响硫化锌薄膜的结晶状态。The influence of ion source bias voltage and deposition temperature on the optical properties and crystallization properties of zinc sulfide films is studied.The ZnS film is prepared on K9 glass substrate by electron beam evaporation technology.A spectrophotometer is used to test the optical properties of the film.The change rules of the refractive index and extinction coefficient of the film are obtained by the spectral inversion method.The crystal state of the film is tested by X-ray diffraction method.As the bias of the ion source increases,the refractive index of the film gradually decreases,but the change range is not large.When the ion source bias voltage is 160 V,the refractive index of the film at a wavelength of 1000 nm reaches a minimum value of 2.210.After the heating is turned on,the refractive index of the film increases significantly.As the deposition temperature increases,the refractive index of the film gradually increases.When the deposition temperature is 210℃,the refractive index of the film at a wavelength of 1000 nm is 2.312 at the maximum.The extinction coefficients of the films prepared under the two process states are very small.The preferred orientation of film growth during ion-assisted deposition is the(220)crystal orientation.The preferred orientation of the film deposited under the heating state of the substrate is the(111)crystal orientation.As the ion source bias increases,the diffraction intensity of the thin film(220)peak decreases.The higher the deposition temperature is,the greater the diffraction intensity of the thin film(111)peak.Through the research in this paper,it is found that the optical characteristics of the zinc sulfide film are more sensitive to changes in deposition temperature.Both the ion source bias and the change in deposition temperature can significantly affect the crystalline state of the zinc sulfide film.

关 键 词：电子束蒸发 硫化锌 薄膜 偏压 温度 折射率 结晶 

分 类 号：O484.4[理学—固体物理]