氧气氛低温退火Pt/Ba_(0.8)Sr_(0.2)TiO_3Pt引起的低频介电弛豫效应  

The low-frequency dielectric relaxation in Pt/Ba_(0.8)Sr_(0.2)TiO_3/Pt thin film capacitors post annealed at low temperatures in oxygen ambient

作　　者：董正高[1] 沈明荣[1] 徐闰[1] 甘肇强[1] 葛水兵[1] 

机构地区：[1]苏州大学物理系,苏州215006

出　　处：《物理学报》2002年第12期2896-2900,共5页Acta Physica Sinica

基　　金：江苏省青年科技基金 (批准号 :BQ980 3 7)资助的课题~~

摘　　要：研究了在不同温度区间氧气氛和氮气氛退火后处理对Pt Ba0 .8Sr0 .2 TiO3 Pt介电特性的影响 .经过高温 5 5 0℃氮气退火处理后 ,再放入 35 0℃的氧气中退火 ,发现样品的介电特性出现了非常明显的低频弛豫现象 ,并且这种低频弛豫现象在 35 0℃的氮气中退火后将会消失 .通过在出现低频弛豫现象的样品的上下电极加一偏压 ,可以发现低频弛豫现象更加明显 ,并且在撤消偏压后这种增强将会逐渐减弱 。Obvious dielectric relaxation in the low-frequency region were found after the as-deposited Pt/BST/Pt capacitors were first post-annealed in nitrogen at 550degreesC and next in oxygen at 350degreesC. Moreover, such a low-frequency dielectric relaxation disappeared after a third time post-annealing in nitrogen at 350degreesC. The dielectric relaxation was both enhanced with negative or positive de bias and reduced slowly to the original state after the de bias was turned off.

关 键 词：氧气氛 低温退火 Pt/Ba0.8Sr0.2TiO3/Pt 低频介电弛豫效应 脉冲激光沉积 动态随机存储器 钛酸锶钡薄膜 铂 

分 类 号：O484.43[理学—固体物理]