Si_(3)N_(4)覆铜基板的界面空洞控制技术  

Interface Voids Control Technology for Copper-Bonded Si_(3)N_(4) Substrates

作　　者：张义政 张崤君[1] 张金利[1] 吴亚光[1] 刘旭 鲍禹希 张腾[1] Zhang Yizheng;Zhang Xiaojun;Zhang Jinli;Wu Yaguang;Liu Xu;Bao Yuxi;Zhang Teng(The 13^(th)Research Institutet CETC,Shijiazhuang 050051,China)

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《半导体技术》2021年第7期572-577,共6页Semiconductor Technology

摘　　要：为满足新一代SiC基功率模块的先进封装需求,研究了Si_(3)N_(4)覆铜活性金属焊接(AMB)基板的界面空洞控制技术,使Si_(3)N_(4)陶瓷与铜箔界面处的空洞率低于1%。选用Ag-Cu-Ti活性金属焊片作为Si_(3)N_(4)覆铜基板的焊料层,其中的活性组分Ti可与Si_(3)N_(4)生成界面反应层TiN,该材料是界面空洞控制的关键。在分析界面空洞形成机理的基础上,以空洞率为指标,对原材料前处理、AMB工艺参数(焊接压力和焊接温度)进行全因子试验设计(DOE)及方差分析,得到最佳的参数组合为:化学法与还原法相结合的原材料前处理方式,焊接压力约2 N,焊接温度900℃。通过原材料前处理和AMB工艺优化的界面空洞控制技术,研制出界面空洞率小于1%的Si_(3)N_(4)覆铜基板,能够满足SiC基功率模块封装基板的高可靠应用需求。To meet the advanced packaging requirements of the new generation SiC-based power modules,the interface void control technology for copper-bonded Si_(3)N_(4) substrates fabricated through active metal brazing(AMB)was studied.The interface void ratio between Si_(3)N_(4) ceramic and copper was less than 1%.Ag-Cu-Ti active metal soldering flake was selected as the solder layer of copper-bonded Si_(3)N_(4) substrates.Ti,as an active component,can react with Si_(3)N_(4) to form a TiN interface layer,and TiN is the key material to control the interface void.Based on the analysis of the interface void formation mechanism,a full factorial design of experiment(DOE)and the variance analysis were carried out in consideration of the raw materials pretreatment and AMB process parameters(welding pressure and welding temperature)with void ratio as the index,and the optimized parameters combinations were confirmed.The raw materials pretreatment is a combination of chemical and reduction method,and the welding pressure and welding temperature are about 2 N and 900℃,respectively.Though the raw materials pretreatment and the AMB process optimization interface void control technology,copper-bonded Si_(3)N_(4) substrate is manufactured with a void ratio of less than 1%,which can meet the application requirements of the high reliability of SiC-based power modules packaging substrates.

关 键 词：SiC基功率模块 Si_(3)N_(4)覆铜基板 活性金属焊接(AMB)工艺 AG-CU-TI 空洞率 

分 类 号：TN305.94[电子电信—物理电子学]