4H-SiC功率肖特基二极管可靠性研究进展  

Research progress on reliability of 4H-SiC power Schottky diodes

作　　者：张玉明[1] 袁昊[1] 汤晓燕[1] 宋庆文[1] 何艳静 李东洵 白志强 ZHANG Yuming;YUAN Hao;TANG Xiaoyan;SONG Qingwen;HE Yanjing;LI Dongxun;BAI Zhiqiang(School of Microelectronics,Xidian University,Xi'an 710071,China)

机构地区：[1]西安电子科技大学微电子学院,西安710071

出　　处：《科技导报》2021年第14期63-68,共6页Science & Technology Review

基　　金：国家自然科学基金项目(61804118);陕西省重点研发计划项目(2018ZDL-GY01-03)。

摘　　要：4H-SiC功率器件作为一种宽禁带半导体器件,凭借突出的材料优势具有耐压高导通电阻低散热好等优势。近年来随着器件的逐步商用,器件的可靠性问题成为新的研究热点。综述了本课题组近期在4H-SIC功率二极管可靠性方面的研究进展,通过高温存储和高压反偏可靠性问题的研究,分析了器件性能退化机制。通过重复雪崩可靠性问题的研究,提出了一种可有效提升器件抗重复雪崩能力的终端方案。As a wide band gap semiconductor device,the 4H-SiC power device has the advantages of high voltage,low conduction resistance and good heat dissipation due to its outstanding material features.In recent years,with the gradual commercialization of the devices,the reliability of the devices becomes a new research hotspot.This paper reviews the recent research progress of our research group on the reliability of the 4H-SiC power diodes.The degradation mechanism of the device performance is analyzed in terms of the high temperature storage and the high voltage anti bias property.According to the reliability of the avalanche,the 4H-SiC JBS diodes with the traditional FLRs and the trench FLRs terminal structure is designed and prepared.The results indicate that the trench FLRs can be used in the terminal scheme to effectively improve the capability of the device on the anti repeated avalanche.

关 键 词：4H-SIC 二极管 MOSFET 

分 类 号：TN311.7[电子电信—物理电子学]