小透光率浅沟槽隔离刻蚀在线量测与形貌和缺陷的研究  

Study on Online Measurement of Low Transmittance Shallow Trench Isolation Etching Based on Morphology and Defects

作　　者：昂开渠 张钱 ANG Kaiqu;ZHANG Qian(Shanghai Huali Integrated Circuit Manufacturing Co.,Ltd.,Shanghai 201203,China)

机构地区：[1]上海华力集成电路制造有限公司,上海201203

出　　处：《集成电路应用》2021年第7期52-55,共4页Application of IC

基　　金：上海市经济和信息化委员会软件和集成电路产业发展专项基金(1500204)。

摘　　要：随着CIS技术的发展和广泛应用,小透光率(Transmission rate,TR)的浅沟槽刻蚀得到最为广泛的应用。针对浅沟槽刻蚀,特别是小透光率的浅沟槽隔离刻蚀,研究如何在不同透光率掩模版上精确控制浅沟槽隔离刻蚀的线宽,深度,膜厚,形貌及优化缺陷的方法,主要论述了小透光率浅沟槽刻蚀工艺各关键指标的变化规律,达到稳定电性和良率的目的,该方法对大规模生产起到的巨大帮助与推进作用。with the development and wide application of CIS technology, shallow trench etching with low transmission rate(TR) is widely used. Aiming at the shallow trench etching, especially the shallow trench isolation etching with small light transmittance, this paper studies how to accurately control the linewidth, depth, film thickness, morphology of shallow trench isolation etching on different light transmittance masks and the method of optimizing defects. It mainly discusses the change rules of the key indexes of the small light transmittance shallow trench etching process, so as to achieve the purpose of stable electricity and yield, This method is of great help and promotion to mass production.

关 键 词：集成电路制造 浅沟槽隔离 刻蚀工艺 透光率 掩模版 深度 线宽 膜厚 缺陷 Qtime 

分 类 号：TN405[电子电信—微电子学与固体电子学]