CF4流量及射频功率等对反应离子刻蚀硅基材料的影响  

Effect of CF Flow Rate and RF Power on Reactive Ion Etched Silicon Based Materials

作　　者：廖荣[1] 崔继耀 董景尚 陈栋 何蔚筠 LIAO Rong;CUI Ji-yao;DONG Jing-shang;CHEN Dong;HE Wei-jun(School of Microelectronic,South China University of Technology,Guangzhou 510640,China)

机构地区：[1]华南理工大学微电子学院,广东广州510640

出　　处：《真空》2021年第4期93-97,共5页Vacuum

基　　金：2020年华南理工大学“学生研究计划”项目(X202010561130);2018年华南理工大学第五批“探索性实验”项目(Y9180400)。

摘　　要：通过一系列的刻蚀实验,研究了在反应离子刻蚀(RIE)过程中,CF4流量及射频功率等工艺参数对刻蚀硅基材料的影响,采用不同工艺条件,得出了对应的刻蚀速率、均匀性、选择比等刻蚀参数,并对结果进行了比较与分析,得到了相对最佳的工艺条件,能较好地实现硅的各向异性刻蚀,为硅基材料刻蚀技术在半导体工艺中的应用做了一定的实验探索。Through a series of etching experiments, the effects of process parameters such as CF4 flow rate and RF power on etched silicon-based materials in the process of reactive ion etch(RIE)were studied. The corresponding etching parameters such as etch rate, uniformity and selection ratio, etc. were obtained by using different technological conditions. The results are compared and analyzed, and the relatively optimum technological conditions are obtained, which can realize the anisotropy etch of silicon. The application of silicon-based material etching technology in semiconductor technology has been explored experimentally in this paper.

关 键 词：反应离子刻蚀 各向异性 硅 均匀性 选择比 

分 类 号：TN304[电子电信—物理电子学]