Ar离子注入边缘终端准垂直GaN肖特基势垒二极管  

Quasi-Vertical GaN Schottky Barrier Diodes with Ar Ion Implanted Edge Termination

作　　者：赵媛媛 郑英奎[2] 康玄武 孙跃 吴昊[2] 魏珂[2] 刘新宇[2] Zhao Yuanyuan;Zheng Yingkui;Kang Xuanwu;Sun Yue;Wu Hao;Wei Ke;Liu Xinyu(School of Microelectronics,University of Chinese Academy of Sciences,Beijing 100049,China;Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China)

机构地区：[1]中国科学院大学微电子学院,北京100049 [2]中国科学院微电子研究所,北京100029

出　　处：《半导体技术》2021年第8期623-629,644,共8页Semiconductor Technology

基　　金：国家自然科学基金资助项目(61804172);广东省重点领域研发计划资助项目(2019B010128001)。

摘　　要：为了研究离子注入边缘终端对准垂直GaN肖特基势垒二极管性能的影响,对器件进行了二维模拟仿真,分析了终端区域尺寸对肖特基结边缘处峰值电场及正向特性的影响,得到了宽度5μm、厚度200 nm的最优终端区域尺寸。基于工艺仿真软件设计了Ar离子注入工艺参数,依次以30 keV、5.0×10^(13)cm^(-2),60 keV、1.5×10^(14)cm^(-2)和140 keV、4.5×10^(14)cm^(-2)的注入能量和注入剂量进行多次注入,形成了Ar离子终端结构。采用Ar离子注入终端的GaN二极管的反向击穿电压从73 V提高到146 V,同时注入前后器件正向特性变化不大。结果表明,采用优化尺寸参数的终端结构能够有效降低肖特基结边缘处的峰值电场强度,从而提高器件的反向击穿电压。To investigate the influence of ion-implanted edge termination on the performance of the quasi-vertical GaN Schottky diode, the effects of termination region dimensions on the peak electric field around the Schottky junction edge and forward characteristic were analyzed by the two-dimensional device simulation.According to the simulation results, the optimal termination region dimensions with a width of 5 μm and a thickness of 200 nm was obtained.The Ar ion implantation process parameters were designed by the process simulation software, followed by multiple implantations at the implantation energy and implantation dose of 30 keV,5.0×10^(13) cm^(-2),60 keV,1.5×10^(14)cm^(-2),and 140 keV,4.5×10^(14) cm^(-2),then the Ar ion termination structure was formed.The reverse breakdown voltage of the GaN diode with Ar ion implanted termination increased from 73 V to 146 V.Meanwhile, the forward characteristics of the device changed slightly after implantation.The results show that the termination structure with optimized size parameters can effectively reduce the peak electric field strength at the Schottky junction edge, consequently improving the reverse breakdown voltage of the device.

关 键 词：GAN 准垂直结构 肖特基势垒二极管 Ar离子注入 边缘终端 

分 类 号：TN313.4[电子电信—物理电子学]