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作 者:赵雪梅[1] 伍平[1] 董加和[1] 米佳[1] 黎亮[1] 陈峻[1] 陈正林 ZHAO Xuemei;WU Ping;DONG Jiahe;MI Jia;LI Liang;CHEN Jun;CHEN Zhenglin(The 26th Institute of China Electronic Technology Group Corporation, Chongqing 400060, China)
机构地区:[1]中国电子科技集团公司第二十六研究所,重庆400060
出 处:《压电与声光》2021年第4期511-513,共3页Piezoelectrics & Acoustooptics
摘 要:为了研究钝化层对声表面波(SAW)滤波器性能的影响,以二氧化硅(SiO_(2))薄膜为钝化层,对厚度为12~80 nm的SiO_(2)膜钝化层工艺数据进行分析。结果表明,当SiO_(2)膜钝化层覆膜厚度大于25 nm时其膜层质量均匀性好,致密度高。同时SiO_(2)膜钝化层厚度对膜层间的粘性、传播损耗、自身的质量负载及谐振峰处的频率均有影响,且会引起过渡带宽发生变化。In order to study the influence of passivation layer on the performance of SAW filters,the silicon dioxide(SiO_(2))film is used as the passivation layer,and the process data of SiO_(2) film passivation layer with a thickness of 12~80 nm was analyzed.The results show that when the thickness of the passivation layer of the SiO_(2) film is greater than 25 nm,the film has good uniformity and high density.At the same time,the thickness of the passivation layer of the SiO_(2) film has an effect on the viscosity between the film layers,the propagation loss,its own mass load and the frequency at the resonance peak,and it will cause the transition bandwidth to change.
关 键 词:表面波滤波器 钝化层 二氧化硅(SiO_(2))覆膜 过渡带宽
分 类 号:TN65[电子电信—电路与系统]
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