压电单晶薄膜衬底光刻工艺研究  

Study on Photolithography Process of Piezoelectric Single Crystal Thin Film SubstrateYADIAN YU SHENGGUANG

作　　者：唐代华[1] 潘祺 米佳[1] 冷俊林[1] 唐塽 何西良[1] 黎妮 TANG Daihua;PAN Qi;MI Jia;LENG Junling;TANG Shuang;HE Xiliang;LI Ni(The 26th Institute of China Electronics Group Corporation, Chongqing 400060, China;The 44th Institute of China Electronics Group Corporati,Chongqing 400060,China)

机构地区：[1]中国电子科技集团公司第二十六研究所,重庆400060 [2]中国电子科技集团公司第四十四研究所,重庆400060

出　　处：《压电与声光》2021年第4期583-586,共4页Piezoelectrics & Acoustooptics

摘　　要：单晶薄膜声表面波(SAW)滤波器因其低损耗,低频率温度系数及大带宽而成为高性能SAW滤波器未来发展的方向。针对单晶薄膜衬底反射带来的换能器指条锯齿和均匀性恶化的问题,该文采用了有机抗反射膜工艺,通过控制抗反射膜的膜厚将衬底的相对反射率由15.84%降低至1.08%,制作出整齐无毛刺的叉指换能器指条,并将SAW谐振器的伯德Q(Bode-Q)值由1400提升到1950。The single crystal thin film SAW filter has become the future development direction of high-performance SAW filter because of its low loss,low temperature coefficient of frequency(TCF)and large bandwidth.In view of the finger strip saw-tooth and the deterioration of uniformity caused by the reflection of single crystal thin film substrate,this work adopts the organic antireflective film process to reduce the relative reflectivity of the substrate from 15.84%to 1.08%by controlling the film thickness of the organic antireflective film,and the neat and burr-free interdigital trandsducer finger has been fabricated.The Bode-Q of SAW resonator has been improved from 1400 to 1950.

关 键 词：压电单晶薄膜衬底 抗反射膜 光刻 伯德Q值 

分 类 号：TN305.7[电子电信—物理电子学] TN384