厚栅氧PMOSγ射线剂量探测器芯片工艺优化研究  

Study on Process Optimization of Thick Gate Oxygen PMOS Gamma Ray Dose Detector Chip

作　　者：张玲玲 郭凤丽 石磊 ZHANG Lingling;GUO Fengli;SHI Lei(China Key System&Integrated Circuit Co.,Ltd.,Wuxi 214072,China)

机构地区：[1]中科芯集成电路有限公司,江苏无锡214072

出　　处：《电子与封装》2021年第9期77-80,共4页Electronics & Packaging

摘　　要：核能是未来能源的重要组成部分,利用得当会为人类造福,如果使用不当会给人类带来毁灭性的灾难,而辐射探测器是发展核能必备的基础设备。PMOS管已广泛应用于γ射线剂量探测领域,提高厚栅氧PMOSγ射线剂量探测器的制造合格率、降低生产成本有利于厚栅氧PMOSγ射线剂量探测器在核技术方面的应用。从芯片制造工艺入手,分析关键指标PMOS管阈值电压的影响因素,采取有效控制措施,使厚栅氧PMOSγ射线剂量探测器的制造成本降低30%。Nuclear energy is an important part of the future energy,the good use of it will be benefit for mankind,if used improperly,it will bring devastating disaster to mankind,the production of radiation detectors is an essential infrastructure for the development of nuclear energy.PMOS tubes have been used in the field of gamma dose detection,it is beneficial to the application of thick gate oxygen PMOS gamma ray dose detector in nuclear technology to improve the manufacturing pass rate and reduce the production cost.Start with the chip manufacturing process,analyze the influence factors of PMOS threshold voltage,effective measures have been taken to reduce the manufacturing cost of thick gate oxygen PMOS gamma ray dose detector by 30%.

关 键 词：PMOS 厚栅氧 阈值电压 

分 类 号：TN307[电子电信—物理电子学]