沟道长度对IGZO薄膜晶体管性能的影响  

The Influence of Channel Length on the Performance of IGZO Thin Film Transistors

作　　者：刘璐[1] 高晓红[1] 孟冰 付钰 孙玉轩 王森 刘羽飞 胡顶旺 LIU Lu;GAO Xiao-hong;MENG Bing;FU Yu;SUN Yu-xuan;WANG Sen;LIU Yu-fei;HU Ding-wang(Jilin Jianzhu University,Changchun 130119,China)

机构地区：[1]吉林建筑大学,吉林长春130119

出　　处：《电脑知识与技术》2021年第26期138-140,共3页Computer Knowledge and Technology

基　　金：大学生创新创业训练计划项目(202010191082);吉林省教育厅项目(JJKH20200276KJ)。

摘　　要：在室温条件下采用射频磁控溅射的方法在热氧化SiO_(2)衬底上生长IGZO薄膜作为有源层,并将其制备为薄膜晶体管器件.研究不同的沟道长度对IGZO薄膜晶体管电学性能的影响.使用场发射扫描电子显微镜(SEM)表征IGZO薄膜的厚度,使用原子力显微镜(AFM)表征薄膜的表面形貌.实验结果表明,沟道长度对IGZO薄膜晶体管有着重要影响.当沟道长度为10μm时,IGZO薄膜晶体管的开关电流比达到1.07×10^(8),载流子迁移率为3.81cm^(2)/V,阈值电压为27V,亚阈值摆幅为2V/dec.At room temperature,using RF magnetron sputtering method to grow IGZO thin film as active layer on thermally oxidized SiO_(2)substrate,and prepare it into thin film transistor device.Study the influence of different channel length on the electrical perfor⁃mance of IGZO thin film transistor Use the field emission scanning electron microscope(SEM)to characterize the thickness of the IGZO film,and use the atomic force microscope(AFM)to characterize the surface morphology of the film.The experimental results show that the channel length has an important influence on the IGZO thin film transistor.When the channel length is 10μm,the switching current ratio of the IGZO thin film transistor reaches 1.07×10^(8),the carrier mobility is 3.81 cm^(2)/V,and the threshold volt⁃age is 27V,The sub-threshold swing is 2V/dec.

关 键 词：IGZO 薄膜晶体管 磁控溅射 沟道长度 

分 类 号：TB383[一般工业技术—材料科学与工程]