一种50 Gb/s PAM4外调制激光器驱动电路  

50 Gb/s PAM4 external modulation laser driver circuit

作　　者：陈江 陆德超 郑旭强 刘果果[3] 刘新宇[3] CHEN Jiang;LU Dechao;ZHENG Xuqiang;LIU Guoguo;LIU Xinyu(School of Microelectronics,University of Chinese Academy of Sciences,Beijing 101408,China;Air Force Engineering University,Xi'an 710086,China;Institute of Microelectronics,Chinese Academy of Sicences,Beijing 100029,China)

机构地区：[1]中国科学院大学微电子学院,北京1001408 [2]空军工程大学,西安710086 [3]中国科学院微电子研究所,北京100029

出　　处：《光通信技术》2021年第10期10-13,共4页Optical Communication Technology

基　　金：国家重点研发计划(2018YFB2201503)资助。

摘　　要：激光器驱动电路是光通信系统中发射端的重要部件,为了适应高速电/光转换的需求,基于28 nm互补金属氧化物半导体(CMOS)工艺,设计了一种外调制激光器(EML)驱动电路,整个驱动电路采用了5级级联的架构,分别包括可变增益放大器(VGA)、两级连续时间线性均衡器(CTLE)、预放大器和输出级,驱动电路内部采用了新型的互补放大和共源共栅结构,驱动电路的输入为50 Gb/s的4阶脉冲振幅调制(PAM4)信号。仿真结果表明:该驱动电路小信号带宽为27 GHz;在12.5 GHz、0.16~0.312 VPP正弦输入下的输出摆幅为1 VPP时,总谐波失真(THD)大小为2.21%,电压增益范围为13.98~20.24 dB,总功耗为340 mW。The laser driving circuit is an important part of the transmitter in the optical communication system.In order to meet the needs of high-speed electric/optical conversion,an externally modulated laser(EML)driving circuit is designed based on the 28 nmcomplementary metal oxide semiconductor(CMOS)process.The whole driving circuit adopts a five-stage cascade architecture,including variable gain amplifier(VGA)and two-stage continuous time linear equalizer(CTLE),preamplifier and output stage.The driving circuit adopts a new complementary amplification and cascode structure,the input of the drive circuit is a 50 Gb/s fourth-order pulse amplitude modulation(PAM4)signal.The simulation results show that the small signal bandwidth of the driving circuit is 27 GHz.When the output swing is 1 VPP at 12.5 GHz and 0.22 VPP sinusoidal input,the total harmonic distortion(THD)is 2.21%.The voltage gain range is 13.98~20.24 dB,and the total power consumption is 340 mW.

关 键 词：外调制激光器驱动 4阶脉冲振幅调制 可变增益放大器 互补放大 共源共栅 

分 类 号：TN432[电子电信—微电子学与固体电子学]