利用分子束外延生长高质量应变平衡 InAs/InAsSb Ⅱ类超晶格  

High quality strain-balanced InAs/InAsSb type-Ⅱ superlattices grown by molecular beam epitaxy

作　　者：魏国帅 郝瑞亭 郭杰 马晓乐 李晓明 李勇 常发冉 庄玉 王国伟[2,3] 徐应强 牛智川[2,3] 王耀 WEI Guo-Shuai;HAO Rui-Ting;GUO Jie;MA Xiao-Le;LI Xiao-Ming;LI Yong;CHANG Fa-Ran;ZHUANG Yu;WANG Guo-Wei;XU Ying-Qiang;NIU Zhi-Chuan;WANG Yao(School of Energy and Environment Science,Yunnan Normal University,Kunming 650092,China;State Key Laboratory for SLs and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;Synergetic Innovation Center of Quantum Information and Quantum Physics,University of Science and Technology of China,Hefei 230026,China;National Center for International Research on Green Optoelectronics,Guangdong Provincial Key Laboratory of Optical Information Materials and Technology,Institute of Electronic Paper Displays,South China Academy of Advanced Optoelectronics,South China Normal University,Guangzhou 510006,China)

机构地区：[1]云南师范大学能源与环境科学学院,云南昆明650092 [2]中国科学院半导体研究所半导体超晶格国家重点实验室,北京100083 [3]中国科学技术大学量子信息与量子科技前沿协同创新中心,安徽合肥230026 [4]华南师范大学华南先进光电子研究院,广东省光信息材料与技术重点实验室,电子纸显示技术研究所,国家绿色光电子国际联合研究中心,广东广州510006

出　　处：《红外与毫米波学报》2021年第5期595-604,共10页Journal of Infrared and Millimeter Waves

基　　金：Supported by the National Natural Science Foundation of China(61774130,11474248,61790581,51973070);the Ph.D.Pro⁃grams Foundation of Ministry of Education of China(20105303120002);National Key Technology Research and Development Program of the Ministry of Sci⁃ence and Technology of China(2018YFA0209101).

摘　　要：利用分子束外延技术在GaSb衬底上生长了高质量的InAs/InAsSb(无Ga)Ⅱ类超晶格。超晶格的结构由100个周期组成,每个周期分别是3.8 nm厚的InAs层和1.4 nm厚的InAs_(0.66)Sb_(0.34)层。在实验过程中出现了一种特殊的尖峰状缺陷。利用高分辨率x射线衍射(HRXRD)、原子力显微镜(AFM)和傅里叶变换红外光谱(FTIR)对外延的超晶格进行了表征和分析。结果表明,优化后的样品几乎为零晶格失配,超晶格0级峰半峰宽为39.3 arcsec,表面均方根粗糙度在10μm×10μm范围内达到1.72Å。红外吸收光谱显示50%的截止波长为4.28μm,PL谱显示InAs/InAs_(0.66)Sb_(0.34)超晶格4.58μm处有清晰锐利的发光峰。这些结果表明,外延生长的InAs/InAsSb超晶格稳定性和重复性良好,值得进一步的研究。In this paper,high quality InAs/InAsSb(Ga-free)type-Ⅱ superlattice were grown on GaSb substrates by molecular beam epitaxy.The superlattice layers structure consists of 100 periods with 3.8 nm thick InAs lay⁃ers and 1.4 nm InAs_(0.66)Sb_(0.34) layers.A specific spike-like defect was found during experiment.The epitaxial layer was characterized and analyzed by high-resolution x-ray diffraction(HRXRD),atomic force microscope(AFM)and Fourier transform infrared spectroscopy(FTIR).The results show that the optimized sample is almost zero lattice mismatched,the FWHM of the zeroth order SL peak is 39.3 arcsec,the RMS surface roughness achieves around 1.72Åover an area of 10μm×10μm.The FTIR absorption spectrum shows a 50%cutoff wavelength of 4.28μm.And PL spectrum shows that the peak of InAs/InAs_(0.66)Sb_(0.34) SL is at 4.58μm.These initial results indi⁃cate that the grown InAs/InAsSb SL is stable and reproducible,and thus it is worthy of further investigation.

关 键 词：InAs/InAsSb 超晶格 分子束外延 Ⅲ-Ⅴ族半导体材料 

分 类 号：TN213[电子电信—物理电子学]