检索规则说明:AND代表“并且”;OR代表“或者”;NOT代表“不包含”;(注意必须大写,运算符两边需空一格)
检 索 范 例 :范例一: (K=图书馆学 OR K=情报学) AND A=范并思 范例二:J=计算机应用与软件 AND (U=C++ OR U=Basic) NOT M=Visual
作 者:索开南[1] 张伟才[1] 杨洪星[1] 郑万超 Suo Kainan;Zhang Weicai;Yang Hongxing;Zheng Wanchao(The 46^(th)Research Institute,CETC,Tianjin 300220,China)
机构地区:[1]中国电子科技集团公司第四十六研究所,天津300220
出 处:《半导体技术》2021年第10期788-794,共7页Semiconductor Technology
摘 要:硅抛光片表面质量除了受抛光工艺参数影响外,在很大程度上还受抛光液的影响。通过检测表面Haze值和粗糙度,研究硅抛光片表面形貌,分析不同抛光液对抛光片表面质量的影响,确定不同抛光阶段对抛光液的要求。研究结果表明粗抛光过程是以化学腐蚀为主导的化学机械平衡过程,与pH值联系紧密,与起机械摩擦作用的硅溶胶中SiO_(2)颗粒平均粒径及分布关系不大。要想获得原子级平坦的表面,精抛光液的作用非常重要,pH值对精抛光片表面的影响非常明显,必须严格控制在合理范围。如果腐蚀作用过大,则会增大表面Haze值和粗糙度;如果机械作用过大,则会在表面出现犁沟。In addition to polishing process parameters, the surface quality of silicon polished wafers is also affected by polishing slurry to a large extent.By detecting the surface Haze value and roughness, the surface morphology of silicon polished wafers were studied, the influences of different slurries on the surface quality of polished wafers were analyzed, and the requirements of slurries used in different polishing stages were determined.The research results show that the rough polishing process is a chemical-mechanical equilibrium process dominated by chemical corrosion, which is closely related to the pH value, and has little relationship with the mean particle diameter and distribution of SiO_(2) particles in the silica sol served as mechanical friction.Fine polishing slurries are very important to obtain the atomic level flat surfaces.The pH value has an obvious effect on the surface of the fine polishing wafers, and it must be strictly controlled within a reasonable range.If the corrosion effect is too large, the surface Haze value and roughness will be increased.If the mechanical effect is too large, furrows will appear on the surface.
分 类 号:TN305.2[电子电信—物理电子学]
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在链接到云南高校图书馆文献保障联盟下载...
云南高校图书馆联盟文献共享服务平台 版权所有©
您的IP:3.135.184.166