垂直氮化镓鳍式功率场效应晶体管优化设计  

Optimized Design of GaN Vertical Fin Power Field-effect Transistor

作　　者：杨嘉颖 利健 黄昊 郑子阳 吴健华 贺威[1] YANG Jiaying;LI Jian;HUANG Hao;ZHENG Ziyang;WU Jianhua;HE Wei(College of Electronics atid Informutioji Engineering,Shenzhen University,Shenzhen,518060,CHN)

机构地区：[1]深圳大学电子与信息工程学院,深圳518060

出　　处：《固体电子学研究与进展》2021年第5期359-364,共6页Research & Progress of SSE

基　　金：广东省重点领域研发计划项目(2019B010138002)。

摘　　要：主要研究了垂直氮化镓鳍式功率场效应晶体管的器件特性。利用理论计算和器件模拟,系统地设计和优化了n型氮化镓漂移层的掺杂浓度和厚度以及鳍宽度的参数,使得击穿电压和导通电阻达到最佳的折衷。经过最终优化后,当n型氮化镓漂移层的掺杂浓度、漂移层的厚度、鳍宽度分别为5×10^(15)cm^(-3)、10μm、0.2μm时,得到高击穿电压为1150 V、低导通电阻为1.01 mΩ·cm^(2)、高Baliga优值为1.31 GW/cm^(2)。结果表明,通过本文方法优化的垂直氮化镓鳍式功率场效应晶体管可用于大功率和高压场合。The device characteristics of GaN vertical fin power field-effect transistor was mainly studied in this paper.By using both theoretical calculation and device simulation,the parameters of doping concentration and thickness of the n-type GaN drift layer as well as the fin width were systematically designed and optimized,in order to get the best trade-off between the breakdown voltage and onresistance.After the final optimization,when the doping concentration of the n-type GaN drift layer,thickness of n-type GaN drift layer,fin width are 5×10^(15)cm^(-3),10μm and 0.2μm respectively,the high breakdown voltage of 1150 V,low on-resistance of 1.01 mΩ·cm^(2),high Baliga’s figure-of-merit up to 1.31 GW/cm;are obtained.The results indicate the GaN vertical fin power field-effect transistor optimized by this method can be used in high power and high voltage applications.

关 键 词：氮化镓 鳍式功率场效应晶体管 击穿电压 导通电阻 Baliga优值 

分 类 号：TN386.1[电子电信—物理电子学]