1 MeV Xe离子辐照对4H-SiC肖特基二极管的性能影响研究  

Effect of 1 MeV Xe Ion Irradiation on Performance of 4H-SiC Schottky Barrier Diode

作　　者：茆邦耀 刘建德[2] 汤金金 尹晋超 刘贵鹏 赵桂娟 MAO Bangyao;LIU Jiande;TANG Jinjin;YIN Jinchao;LIU Guipeng;ZHAO Guijuan(School of Physical Science and Technology,Lanzhou University,Lanzhou 730000,China;Institute of Modern Physics,Chinese Academy of Sciences,Lanzhou 730000,China)

机构地区：[1]兰州大学物理科学与技术学院,兰州730000 [2]中国科学院近代物理研究所,兰州730000

出　　处：《真空与低温》2021年第6期601-607,共7页Vacuum and Cryogenics

基　　金：国家自然科学基金(61874108);甘肃省自然科学基金(20JR5RA287);兰州大学中央高校基本科研业务费专项资金(lzujbky-2021-58)。

摘　　要：离子辐照会影响半导体器件的性能,进而使得器件在空间辐射等特定环境条件下的工作寿命和可靠性退化。研究了经过1 MeVXe离子辐照后4H-SiCSBD电学性能的变化及其原因。采用SRIM软件模拟了不同能量Xe离子辐照对4H-SiCSBD组成材料的影响,根据模拟结果选取了1 MeV的Xe离子对4H-SiCSBD进行辐照。实验结果表明,辐照后4H-SiCSBD由肖特基接触变成了欧姆接触,金属-半导体界面产生了大量空位缺陷,使得接触界面的势垒降低,隧穿电流增大,导致4H-SiCSBD的整流特性失效。Ions irradiation has significant influence on the performance of semiconductor device,thus its working life and reliability in space environment.In this paper the electrical propertie schange of 4H-SiC SBD and its reasons after 1MeV Xe ion irradiation was studied.The influence of Xe ion irradiation with different energy on 4H-SiC SBD was simulated via SRIM software.According to the simulation results,1MeV Xe ion was selected to irradiate 4H-SiC SBD.The experimental results show that the characteristic curve of 4H-SiC SBD changes from Schottky contact to Ohmic contact after irradiation,and a large number of vacancy defects are generated at the interface between metal and semiconductor.These defects reduce the barrier height of the contact interface and increase the tunneling current,which in turn leads to the failure of the rectification characteristics of 4H-SiC SBD.

关 键 词：Xe离子 辐照 4H-SIC 肖特基二极管 XTEM SRIM 

分 类 号：O536[理学—等离子体物理] TN386[理学—物理]