抗SEB加固功率VDMOS的温度特性研究  

Study on Temperature Characteristics of SEB Hardened Power VDMOS

作　　者：徐政 吴素贞 徐海铭 廖远宝 吴锦波 彭时秋 赵文彬 XU Zheng;WU Suzhen;XU Haiming;LIAO Yuanbao;WU Jinbo;PENG Shiqiu;ZHAO Wenbin(The 58th Research Institute of China Electronics Technology Group Corporation,Wuxi,Jiangsu 214035,P.R.China)

机构地区：[1]中国电子科技集团公团第五十八研究所,江苏无锡214035

出　　处：《微电子学》2021年第5期746-750,共5页Microelectronics

基　　金：国家重点研发计划专项(2017YFF0104800)。

摘　　要：仿真研究了300V抗辐射功率VDMOS器件在不同缓冲层浓度、不同LET值下单粒子烧毁(SEB)效应的温度特性。结果表明,SEB的温度特性与LET值相关,LET值较小时(0.1pC/μm),SEB电压呈正温度系数特性;LET值较大时(1pC/μm),SEB电压呈负温度系数特性。重点分析了1pC/μm LET时离化强度大的条件下SEB电压的碰撞电离分布和晶格温度分布,分析发现,功率VDMOS颈区JFET/P阱的pn结是SEB效应薄弱点,这得到了实验结果的验证。本模型计算的结果表明,当LET值大、器件工作温度高时,功率VDMOS器件的单粒子烧毁风险最大。该项研究结果为抗辐射加固功率VDMOS器件的应用提供技术参考。The temperature characteristics of single particle burnout(SEB)effect in 300Vradiation-resistant VDMOS devices with different buffer layer concentrations and different LET values were simulated.The results showed that the temperature characteristics of SEB were related to the LET value.When the LET value was small(0.1pC/μm),the SEB voltage showed a positive temperature coefficient characteristic.When the LET value was large(1pC/μm),the SEB voltage showed a negative temperature coefficient characteristic.The impact ionization distribution and lattice temperature distribution of SEB voltage under the condition of high ionization intensity at 1 pC/μm LET were analyzed.It was found that the PN junction of the JFET/P well in the neck region of the power VDMOS was the weak point of SEB effect,which was verified by the experimental results.The calculated results of this model showed that when the LET value was large and the operating temperature was high,the single particle burning risk of power VDMOS was the greatest.The research results provided a technical reference for the applications of radiation hardened power VDMOS devices.

关 键 词：功率VDMOS 单粒子烧毁 温度特性 抗辐射加固 

分 类 号：TN386[电子电信—物理电子学]