GaN基MOSFET低温特性的实验表征及分析  

Testing and Characterization of GaN-based MOSFET at Space Cryogenic Temperature

作　　者：肖一平 王雅宁[1] 刘超铭[1] 张延清[1] 齐春华[1] 王天琦[1] 马国亮[1] 霍明学[1] 陆裕东 岳龙 XIAO Yiping;WANG Yaning;LIU Chaoming;ZHANG Yanqing;QI Chunhua;WANG Tianqi;MA Guoliang;HUO Mingxue;LU Yudong;YUE Long(Space Environment Simulation Research Infrastructure,Harbin Institute of Technology,Harbin 150001,China;Guangzhou GRG Metrology&Test Co.,Ltd.,Guangzhou 510000,China)

机构地区：[1]哈尔滨工业大学空间环境与物质科学研究院,黑龙江哈尔滨150001 [2]广州广电计量检测股份有限公司,广东广州510000

出　　处：《原子能科学技术》2021年第12期2231-2236,共6页Atomic Energy Science and Technology

基　　金：Supported by National Natural Science Foundation of China(11805045,11775061,61704039,61771167)。

摘　　要：深空探测活动需要电子元器件在极端低温环境(T<40 K)中能正常使用。基于低温环境下的应用需求,本文研究了GaN基MOSFET在15~300 K温区的低温环境效应。实验结果显示,随着温度逐渐从300 K降低到15 K,饱和漏极电流和阈值电压均增大。低温下,转移特性和输出特性均变好。分析发现,较高的电子迁移率是GaN基MOSFET低温下电特性变化的主要原因。Deep space exploration applications require electronics which are capable of operation at extremely low temperatures(T<40 K).Based on the application requirements of cryogenic temperatures,the effects of cryogenic temperatures from 15 Kto300 K on GaN-based MOSFET were investigated in this paper.The experimental results show that the saturated drain current and threshold voltage are increased as the device is cooled down to 15 K.Both output characteristics and transfer characteristics are enhanced as temperature decreases.The increase of electron migration rate could be the main reason for the shift of electrical parameters of GaN-based MOSFET.

关 键 词：GAN MOSFET 低温 特性 

分 类 号：TN386.1[电子电信—物理电子学]