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作 者:刘畅洋 晋云霞[1,3,4] 曹红超 孔钒宇[1,3] 王勇禄[1,3] 邵建达 Liu Changyang;Jin Yunxia;Cao Hongchao;Kong Fanyu;Wang Yonglu;Shao Jianda(Thin Film Optics Laboratory,Shanghai Institute of Optics and Fine Mechanics,Chinese Academy of Sciences,Shanghai201800,China;Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing100049,China;Key Laboratory of High Power Laser Materials,Shanghai Institute of Optics and Fine Mechanics,Chinese Academy of Sciences,Shanghai201800,China;CAS Center for Excellence in Ultra-intense Laser Science,Shanghai201800,China)
机构地区:[1]中国科学院上海光学精密机械研究所薄膜光学实验室,上海201800 [2]中国科学院大学材料与光电研究中心,北京100049 [3]中国科学院上海光学精密机械研究所强激光材料重点实验室,上海201800 [4]中国科学院超强激光科学卓越创新中心,上海201800
出 处:《中国激光》2021年第21期55-62,共8页Chinese Journal of Lasers
基 金:国家重点研发计划“变革性技术关键科学问题”重点专项(2020YFA0714500);国家自然科学基金重点项目(61875212)。
摘 要:氟化钇薄膜由于具有优良的光学性能常被用于红外波段,通过优化磁控溅射工艺,成功地在锗基底上实现了厚度大于1μm的氟化钇薄膜的制备,并分析了溅射功率对于氟化钇薄膜光学性能的影响。采用X射线衍射仪、X射线光电子能谱仪、傅里叶红外光谱仪和原子力显微镜对样品的物相结构、化学成分、光学常数和表面粗糙度进行了表征和系统分析。研究表明在200 W的溅射功率下能够制备出氧原子数分数低于6%,在2~8μm波长范围内折射率高于1.6的低吸收氟化钇薄膜。Objective Fluoride film is used in infrared bands because of its excellent optical properties,including a large bandgap that results in increased transparency.Particularly,yttrium fluoride(YF_(3))has a broad transmission range,from ultraviolet(UV)to infrared(IR).Different deposition methods are used to obtain different optical properties for YF_(3) thin films.Electron beam deposition is the most popular technique owing to its high productivity.However,this film is porous and has a low packing density.Therefore,it absorbs much IR energy in the water absorption bands and its optical properties are likely to be unstable.Alterenatively,sputtering creates films with a high packing density.However,YF_(3) thin films are easily contaminated with oxygen and crumbled.Unfortunately,to our knowledge,little work has been done to address the issue.Therefore,investigating how the deposition affects the material’s composition,structure,and optical properties is important.Methods The sputtering material was YF_(3) ceramic target(99.9%purity,100-mm diameter,3-mm thickness).All YF_(3) thin films were deposited on germanium wafers at room temperature by radio frequency magnetron sputtering at different deposition power in a vacuum chamber.Sputtering power of 150,200,250,300,and 350 W were selected to deposit YF_(3) films.However,the thin films easily crumbled when sputtering power was more than 300 W.Therefore,three power parameters of 150,200,and 250 W were selected.The vacuum chamber was evacuated to a 5×10^(-5) Pa base pressure with turbomolecular and mechanical pumps.Presputtering was performed for approximately 10 min with a shutter covering the substrate before film deposition.The target-substrate distance is 15 cm.Under 1.0 Pa at room temperature,the deposited power changed step by 50 W from 150 W to 250 W.To maintain the film thickness at 1000 nm,deposition time lasted for 5,4,and 3 h at 150,200,and 250 W,respectively.The sputtering deposition conditions of the YF_(3) films are listed in Table 1.The crystalline structure
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