硫化时间对两步硫化法制备ZnS薄膜性能的影响  

Effects of sulfidation time on properties of ZnS thin film prepared by two-step sulfidation

作　　者：张超 张仁刚 杨光 曹兴忠[2] 张鹏[2] 王宝义[2] Zhang Chao;Zhang Rengang;Yang Guang;Cao Xingzhong;Zhang Peng;Wang Baoyi(Hubei Province Key Laboratory of Systems Science in Metallurgical Process,Wuhan University of Science and Technology,Wuhan 430065,China;Institute of High Energy Physics,Chinese Academy of Sciences,Beijing 100049,China)

机构地区：[1]武汉科技大学冶金工业过程系统科学湖北省重点实验室,湖北武汉430065 [2]中国科学院高能物理研究所,北京100049

出　　处：《武汉科技大学学报》2022年第2期93-98,共6页Journal of Wuhan University of Science and Technology

基　　金：国家自然科学基金资助项目(11975173,11705212);武汉科技大学冶金工业过程系统科学湖北省重点实验室开放基金(Y201713).

摘　　要：首先采用磁控溅射法在玻璃衬底上沉积Zn薄膜,再先后于200℃和400℃温度下对Zn薄膜进行硫化处理以制备ZnS薄膜,借助X射线衍射仪(XRD)、扫描电子显微镜(SEM)、X射线能谱仪(EDS)、紫外-可见分光光度计等研究了硫化时间对所制ZnS薄膜性能的影响。结果表明,ZnS为六方晶体结构,在200℃及400℃和硫化时间均为1 h的条件下,所制ZnS薄膜的结晶性、光学性质、S/Zn原子比及组织均匀性最佳。Zn thin film was deposited on glass substrates via magnetron sputtering,and then ZnS thin film was prepared by sulfurizing Zn thin film at 200℃and 400℃.By means of XRD,SEM,EDS,UV-Vis spectrophotometer and etc.,the effects of sulfidation time on the properties of ZnS thin film were investigated.The results show that the microstructure of ZnS is hexagonal crystal,and under the conditions of sulfidation at 200℃and 400℃for 1 h,the as-prepared ZnS thin film exhibits the optimal crystallinity,optical properties,S/Zn atomic ratio and structural uniformity.

关 键 词：ZNS薄膜 磁控溅射 硫化时间 晶体结构 光透过率 S/Zn原子比 

分 类 号：TN304[电子电信—物理电子学]