AlN陶瓷腔体的激光加工和芯片埋置工艺  

Technology on Laser Machining and Chip Embedding of AlN Ceramic Cavity

作　　者：王运龙[1] 郭育华[1] 魏晓旻[1] WANG Yunlong;GUO Yuhua;WEI Xiaomin(The 38th Research Institute of CETC,Hefei 230088,China)

机构地区：[1]中国电子科技集团公司第三十八研究所,安徽合肥230088

出　　处：《电子工艺技术》2022年第1期14-17,45,共5页Electronics Process Technology

基　　金：装备预先研究(共用技术)项目。

摘　　要：AlN作为陶瓷封装材料具有优异的电性能和热性能。针对高功率、高频多芯片组件高密度组装的需要,采用激光加工技术在AlN陶瓷基片上直接加工腔体结构成型。通过构建激光加工腔体的理论模型,对比试验结果,分析激光功率、频率、扫描速率及加工路径等工艺参数对腔体刻蚀速率、腔体底部粗糙度的影响规律。阐述激光加工遍数与刻蚀深度的线性关系,测试腔体底部的平面度,获得了预定深度的腔体结构。完成了芯片在腔体内埋置,结果表明,激光直接加工的腔体结构可以满足芯片埋置的应用要求。AlN is a ceramic packaging material with excellent electrical and thermal properties.In order to meet the needs of high density assembly process of high power and high frequency multi-chip modules,the cavity structure is directly machined on AlN electro-ceramic substrate using laser processing technology.Comparing the experimental results,a theoretical model of laser etching is proposed to analysis the effects of laser energy,repeat frequency,machining speed and path on the cavity etching rate and the roughness at the bottom of the cavity.It is deduced that the etching depth and the laser etching times have a linear relationship.The flatness of the bottom of the cavity is measured and the predetermined depth is obtained.According to the chip embedding in the cavity,the laser machining AlN cavity can meet the application requirements of chip integration.

关 键 词：ALN陶瓷 腔体 激光加工 芯片埋置 

分 类 号：TN45[电子电信—微电子学与固体电子学]