势垒可调的氧化镓肖特基二极管  

Barrier-tunable gallium oxide Schottky diode

作　　者：汪海波 万丽娟 樊敏[1] 杨金[1,2] 鲁世斌 张忠祥[1,2] Wang Hai-Bo;Wan Li-Juan;Fan Min;Yang Jin;Lu Shi-Bin;Zhang Zhong-Xiang(Department of Electronic Information and Electrical Engineering,Hefei Normal University,Hefei 230601,China;Anhui Province Key Laboratory of Simulation and Design for Electronic Information System,Hefei 230601,China)

机构地区：[1]合肥师范学院电子信息与电气工程系,合肥230601 [2]电子信息系统仿真与设计安徽省重点实验室,合肥230601

出　　处：《物理学报》2022年第3期292-298,共7页Acta Physica Sinica

基　　金：安徽省高校自然科学基金(批准号:KJ2019A0714,KJ2020A0091);电子信息系统仿真设计安徽省重点实验室开放基金(批准号:2019ZDSYSZB02,2020PTZD06);大学生创新创业教育训练计划(批准号:201814098030,201914098094)资助的课题。

摘　　要：氧化镓作为新一代宽禁带材料,其器件具有优越的性能.本文仿真研究了n^(+)高浓度外延薄层对氧化镓肖特基二极管的势垒调控.模拟结果显示,当n型氧化镓外延厚度为5 nm、掺杂浓度为2.6×10^(18)cm^(–3)时,肖特基二极管纵向电流密度高达496.88 A/cm^(2)、反向击穿电压为182.30 V、导通电阻为0.27 mΩ·cm^(2),品质因子可达123.09 MW/cm^(2).进一步研究发现肖特基二极管的性能与n^(+)外延层厚度和浓度有关,其电流密度随n^(+)外延层的厚度和浓度的增大而增大.分析表明,n^(+)外延层对势垒的调控在于镜像力、串联电阻及隧穿效应综合影响,其中镜像力和串联电阻对势垒的降低作用较小,而高电场下隧穿效应变得十分显著,使得热发射电流增大的同时,隧穿电流得到大幅度提升,从而进一步提升了氧化镓肖特基二极管的性能.Gallium oxide is a new generation of wide band gap materials,and its device has excellent performance.The barrier control of Ga_(2)O_(3) Schottky diode by n+high concentration epitaxial thin layer is studied.The results show that the performance of Schottky diode has greatly improved after epitaxy of n-type gallium oxide.The vertical current density is 496.88A·cm^(–2),the reverse breakdown voltage is 182.30 V,and the calculated Ron is 0.27 mΩ·cm^(2) when the epitaxial concentration is 2.6×10^(18)cm^(–3) and the thickness is 5 nm.Further studies indicate that the current density increases with the increase of the layer thickness and the concentration.Theoretical analysis shows that the barrier is controlled by mirror force,series resistance and tunnel effect.Of them,the tunnel effect has the greatest influence,which makes the barrier height decrease with the layer concentration as √n and the thickness as √a.As a result,the hot emission current and the tunnel current increase simultaneously,which improves the performance of Ga_(2)O_(3) Schottky diode.

关 键 词：氧化镓 肖特基二极管 有效势垒 隧穿电流 

分 类 号：TN311.7[电子电信—物理电子学]