热氧化对MOCVD外延GaN薄膜光学特性影响的实验研究  

Experimental Investigation of the Thermal Oxidation Effect on the Optical Properties of GaN Thin Films Synthesized by MOCVD

作　　者：陈柯宇 咸冯林 徐林华 郑改革 匡文剑 裴世鑫 CHEN Keyu;XIAN Fenglin;XU Linhua;ZHENG Gaige;KUANG Wenjian;PEI Shixin(School of Physics and Optoelectronic Engineering,Nanjing University of Information Science&Technology,Nanjing,210044,CHN)

机构地区：[1]南京信息工程大学物理与光电工程学院,南京210044

出　　处：《光电子技术》2021年第4期303-307,共5页Optoelectronic Technology

基　　金：江苏省自然科学基金青年基金(BK20180784)。

摘　　要：采用金属有机化学气相沉积(MOCVD)法在600℃下在蓝宝石衬底上外延生长了GaN薄膜,研究了热氧化温度对GaN薄膜的微观结构和光学特性的影响。实验表明600℃生长的GaN薄膜结晶质量较差,随着热氧化温度逐渐增加,GaN薄膜的结晶质量逐渐提高,当温度提高到900℃时,GaN和Ga;O;的相共存。表面粗糙度均方根随着热氧化温度的增加而增加。所有样品在可见光区域都具有较高的透过率且存在明显的震荡干涉条纹,随着热氧化温度的增加,光学带隙宽度由3.38 eV降低到3.37 eV。GaN thin films were epitaxial grew on sapphire substrates at 600 ℃ by metal organic chemical vapor deposition(MOCVD)method. The effect of thermal oxidation temperature on the microstructural and optical properties of GaN thin films were investigated. The results showed that the crystalline quality of GaN film grew at 600 ℃ was poor,and the crystalline quality of GaN films increased gradually with temperature increasing. When the temperature increased to 900 ℃,both GaN and Ga;O;phase coexisted. The surface roughness increased with the increase of temperature. All the samples had high transmittance and obvious oscillating interference fringes in the visible region. The optical bandgap decreased from 3.38 eV to 3.37 eV with the increase of thermal oxidation temperature.

关 键 词：氮化镓薄膜 金属有机化学气相沉积 热氧化 光学特性 

分 类 号：O472.3[理学—半导体物理] TN383.2[理学—物理]