有源层厚度对IGZO薄膜晶体管性能的影响  

Influence of the InGaZnO channel layer thickness on the performance of thin film transistors

作　　者：孟冰 高晓红[1] 付钰 孙玉轩 王森 MENG Bing;GAO Xiao-hong;FU Yu;SUN Yu-xuan;WANG Sen(School of electrical and computer,Jilin Jianzhu university,Changchun 130000,China)

机构地区：[1]吉林建筑大学电气与计算机学院,长春130000

出　　处：《吉林建筑大学学报》2022年第1期80-84,共5页Journal of Jilin Jianzhu University

基　　金：吉林省科技厅科技发展计划项目(20190303114SF);吉林省教育厅“十三五”科学技术项目(JJKH20200276KJ).

摘　　要：室温下使用射频磁控溅射设备在热氧化SiO2衬底上沉积厚度为33 nm,47 nm和59 nm的InGaZnO(IGZO)薄膜,并制备成薄膜晶体管器件,使用扫描电子显微镜(SEM)和原子力显微镜(AFM)观察IGZO薄膜的表面形貌,研究有源层厚度对IGZO薄膜晶体管电学性能的影响.实验结果表明,薄膜厚度为47 nm时,薄膜表面粗糙度最低,薄膜沉积质量最好.当IGZO有源层的厚度为47 nm时,界面陷阱态密度最小,器件的电学性能最佳,迁移率为1.71 cm^(2)/(V·s),阈值电压为24 V,亚阈值摆幅为2 V/dec,开关电流比达到7.83×10^(7).At room temperature,use RF magnetron sputtering equipment to deposit InGaZnO(IGZO)films with thicknesses of 33 nm,47 nm and 59 nm on thermally oxidized SiO_(2) substrates,and prepare them into thin film transistor devices.Use scanning electron microscope(SEM)and atomic force microscope(AFM)to observe the surface morphology of IGZO film,Study the effect of active layer thickness on the electrical properties of IGZO thin film transistors Influence.The experimental results show that when the film thickness is 47 nm,the film surface roughness is the lowest,and the film deposition quality is the best.When the thickness of the IGZO active layer is 47 nm,the interface trap state density is the smallest,the electrical performance of the device is the best,and the mobility is 1.71 cm^(2)/V·s,the threshold voltage is 24 V,the subthreshold swing is 2 V/dec,and the switch current ratio reaches 7.83×10^(7).

关 键 词：IGZO 薄膜晶体管 有源层厚度 磁控溅射 

分 类 号：TB383[一般工业技术—材料科学与工程]