辐照对MOSFETs栅介质阈值电压漂移的影响研究  

Investigation of irradiation effects on threshold voltage shifts in MOSFETs gate dielectric

作　　者：杨燚 赵凯[1,2] 赵钰迪 董俊辰 YANG Yi;ZHAO Kai;ZHAO Yudi;DONG Junchen(Academy of Smart IC&Network,Beijing Information Science&Technology University,Beijing 100192,China;Institute of Microelectronics,Peking University,Beijing 100871,China)

机构地区：[1]北京信息科技大学智能芯片与网络研究院,北京100192 [2]北京大学微米纳米加工技术国家级重点实验室,北京100871

出　　处：《北京信息科技大学学报（自然科学版）》2022年第1期40-44,共5页Journal of Beijing Information Science and Technology University

基　　金：北京市教委科研计划资助项目(KM202111232016);北京信息科技大学“勤信人才”培育计划资助项目(QXTCP C202109);北京信息科技大学校科研基金项目(2021XJJ20)。

摘　　要：研究了铪基金属-氧化物半导体场效应晶体管(metal oxide semiconductor field effect transistors, MOSFETs)栅介质中陷阱诱导的退化和总剂量电离辐照效应。利用动力学蒙特卡洛模拟方法,研究了MOSFETs栅介质中本征缺陷的生长/复合、辐照诱导陷阱电荷和载流子的生成以及载流子俘获/发射等多种物理行为对阈值电压漂移的影响。结果显示MOSFETs阈值电压漂移主要受温度、辐照剂量和被钝化的悬挂键密度的影响。随着温度的升高,栅介质内产生新的缺陷参与载流子输运等行为,导致阈值电压漂移更加明显。辐照剂量很小时辐照效应相对较小,陷阱诱导的退化是主要的影响因素;随着辐照剂量的累积,辐照效应开始占主导地位并产生强烈的负向漂移;当辐照剂量累积到极高水平时,阈值电压漂移表现出反弹效应。Trap-induced degradation and total ionizing dose(TID) radiation effects in MOSFETs with Hf gate dielectric are studied.Mechanisms including inherent trap generation/recombination, radiation induced trapped charges and carrier generation, and charge trapping/detrapping are well-considered in the kinetic Monte Carlo(KMC) method.The threshold voltage shifts are prominently affected by temperature, radiation dose, and passivated bonds density.New defects caused by temperature participate in the above-mentioned physical processes, resulting in obvious threshold voltage shifts.The TID radiation effects are relatively small and thereby the inherent defects are prime in low-dose.However, as TID accumulates, radiation effects begin to dominate and have an intense negative impact on the shifts.In addition, a rebound effect of the threshold voltage shifts is observed as the radiation dose accumulates to an extremely high level.

关 键 词：高K栅介质 金属-氧化物半导体场效应晶体管 阈值电压漂移 总剂量辐照效应 动力学蒙特卡洛 

分 类 号：TN386.1[电子电信—物理电子学]