截止频率0.8 THz的GaN肖特基二极管及其设计  

GaN Schottky Barrier Diodes with Cut-off Frequency of 0.8 THz and Its Design

作　　者：代鲲鹏 张凯[1] 李传皓 范道雨 步绍姜 吴少兵[1,2] 林罡 陈堂胜[1,2] DAI Kunpeng;ZHANG Kai;LI Chuanhao;FAN Daoyu;BU Shaojiang;WU Shaobing;LIN Gang;CHEN Tangsheng(Nanjing Electronic Devices Institute,Nanjing, 210016,CHN;Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing,210016,CHN)

机构地区：[1]南京电子器件研究所,南京210016 [2]微波毫米波单片集成和模块电路重点实验室,南京210016

出　　处：《固体电子学研究与进展》2022年第1期10-15,共6页Research & Progress of SSE

基　　金：国家自然科学基金资助项目(61874101)。

摘　　要：通过设计圆形阳极以及相同面积不同周长的指形阳极,研究了不同阳极周长面积比对太赫兹频段内GaN肖特基二极管串联电阻的影响。在阳极面积分别为7.1、12.6、19.6μm^(2)时,采用圆形阳极的二极管串联电阻分别为14、11、6Ω。相同面积下采用指形阳极的二极管串联电阻分别为6.0、4.4、3.3Ω,截止频率达804、753、791GHz,截止频率分别提升了27%、35%、25%。结果表明,适当提升肖特基二极管阳极的周长面积比能降低串联电阻,提高二极管的截止频率。By designing round anodes and finger anodes with the same area and different circumferences,the influence of the ratio of perimeter to area of anode on the series resistance of GaN Schottky barrier diodes in THz band was reported in this paper. When the anode area is 7.1 μm^(2),12.6μm^(2) and 19.6 μm^(2),the series resistance of the diode with circular anode is 14,11 and 6 Ω. However,in the case of the same anode area,the series resistance of the diode with finger anode is 6,4.4 and3.3 Ω respectively,the cut-off frequency is 804,753 and 791 GHz respectively,and the cut-off frequency is increased by 27%,35% and 25% respectively. The results show that properly increasing the ratio of anode perimeter to area of Schottky barrier diode can significantly reduce the series resistance and increase the cut-off frequency.

关 键 词：GAN 肖特基二极管 太赫兹 周长面积比 指形阳极 

分 类 号：TN312[电子电信—物理电子学]