利用电容-电压法研究GaN基双异质结发光二极管的结构特点  

Using capacitance-voltage method to study the structural characteristics of GaN-based double heterojunction light emitting diodes

作　　者：范千千 徐坤熠 符斯列[2] FAN Qian-qian;XU Kun-yi;FU Si-lie(School of Physics and Communication Engineering,South China Normal University,Guangzhou,Guangdong 510006,China;National Demonstration Center for Experimental Physis Education,Guangzhou,Guangdong 510006,China)

机构地区：[1]华南师范大学物理与电信工程学院,广东广州510006 [2]华南师范大学物理学科基础课程国家级实验教学示范中心,广东广州510006

出　　处：《大学物理》2022年第5期69-73,共5页College Physics

基　　金：国家自然科学基金(10575039);广东省自然科学基金(S2013010012548);广东省高校特色创新项目(2018KTSCX121)资助

摘　　要：本文利用电容-电压法(C-V法)研究GaN基蓝光发光二极管的双异质结构,将测得的样品C-V曲线由变化中心处分为两部分,分别分析其PN结类型.接着通过液氮对二极管进行温度控制,得到不同温度下的C-V曲线及其对应的杂质浓度分布曲线,分析温度对两者的影响.最后由不同温度下的杂质浓度分布曲线,分析GaN基蓝光发光二极管的双异质结构.实验结果表明该GaN基双异质结蓝光二极管的PN结类型两边都为突变结,在不同温度下,样品的电容值随温度的升高呈增大趋势.双异质结构随温度的降低逐渐显著,当T=98 K时,双异质结构趋于理想情况.In this paper, the double heterojunction structure of GaN based blue light emitting diodes is studied by capacitance voltage method(C-V method). The C-V curve of the measured samples is divided into two parts from the change center, and the PN junction types are analyzed respectively. Then, the temperature of the diodes is controlled by liquid nitrogen, the C-V curves at different temperatures and the corresponding impurity concentration distribution curves are obtained, and the influence of temperature on them is analyzed. Finally, the double heterostructure of GaN based blue light emitting diodes is analyzed from the impurity concentration distribution curves at different temperatures. The experimental results have showed that the PN junction type of GaN based double heterojunction blue light diode is abrupt junction on both sides;At different temperatures, the capacitance of the sample increases with the increase of temperature and decreased with the decrease of temperature. The double heterostructure is gradually significant with the decrease of temperature. When T= 98 K, the double heterostructure tends to be ideal.

关 键 词：C-V法 GaN基蓝光二极管 双异质结构 

分 类 号：O472.3[理学—半导体物理]