硅衬底化学机械抛光液的循环使用性能  

Recycling performance of chemical mechanical polishing slurry for silicon substrate

作　　者：陶琴 王振扬 王同庆[1] TAO Qin;WANG Zhenyang;WANG Tongqing(State Key Lab of Tribology,Tsinghua University,Beijing 100084,China)

机构地区：[1]清华大学摩擦学国家重点实验室,北京100084

出　　处：《电镀与涂饰》2022年第7期480-485,共6页Electroplating & Finishing

摘　　要：采用8%(质量分数,下同)有机碱A和3%有机碱B作为抛光液的复配p H调节剂对硅衬底进行化学机械抛光。研究了2种有机碱单独使用或复配使用时对抛光速率和抛光表面质量的影响。结果表明,当2种有机碱复配时,硅衬底的平均抛光速率达到1.04μm/min,同时可获得低表面粗糙度(Ra=0.621 nm)和无划痕的抛光表面。该抛光液在循环使用过程中表现出良好的稳定性,循环使用10次后抛光表面质量基本无变化,但抛光速率略降,主要与抛光液pH降低、黏度增大以及硅溶胶颗粒团聚有关。Chemical mechanical polishing of silicon substrate was conducted in a slurry with a composite pH regulator comprising 8wt.%of organic alkali A and 3wt.%of organic alkali B.The effects of the two kinds of organic alkalis served alone or in combination on polishing rate and surface quality of silicon substrate were studied.The results showed that the average polishing rate of silicon substrate reached 1.04μm/min when chemically mechanically polished in the slurry using the composite pH regulator,and the polished silicon substrate featured a low surface roughness(Ra=0.621 nm)without scratches.The slurry exhibited excellent stability in recycling use.After being recycled for 10 times,the polished surface quality was basically unchanged,but the polishing rate was decreased slightly probably due to the decrease of pH,increase of viscosity,and agglomeration of colloidal silica particles in the slurry.

关 键 词：化学机械抛光 硅衬底 PH调节剂 有机碱 抛光速率 表面粗糙度 循环使用 

分 类 号：TG175[金属学及工艺—金属表面处理] TQ153.5[金属学及工艺—金属学]