n型GaAs欧姆接触电极制备工艺  

Preparation Process of n-Type GaAs Ohmic Contact Electrode

作　　者：左芬[1] 翟章印[1] ZUO Fen;ZHAI Zhangyin(Department of Physics, Huaiyin Normal University, Huai’an 223300, China)

机构地区：[1]淮阴师范学院物理系,淮安223300

出　　处：《人工晶体学报》2022年第4期606-610,共5页Journal of Synthetic Crystals

基　　金：江苏省自然科学基金(BK20140450);江苏省高校自然科学基金重大项目(19KJA150011)。

摘　　要：目前,n型GaAs欧姆接触电极的制备方法以蒸镀法为主,然而该方法具有设备价格高、浪费电极材料的缺点。本文采用离子溅射法制备了n型GaAs的欧姆接触电极AuGeNi/Au,通过优化制备过程,可获得表面光滑平整、成分均匀无偏析的电极层。400℃氩气气氛下退火处理后,电极与GaAs之间由肖特基接触变为欧姆接触,极间电阻降为原来的1/20。退火温度在400~500℃时可得到很小的比接触电阻率(10^(-6)Ω·cm^(2)),有利于半导体器件工作稳定性的提高,降低能耗。退火温度低于400℃或高于500℃后比接触电阻率都较大,这分别与欧姆接触未形成以及Au-Ge合金的“球聚”有关。该制备方法和过程的优点为:设备成本低、流程简便、节省电极材料,具有良好的经济效益和实用价值,适合科研实验室使用。At present,the preparation method of the n-type GaAs ohmic contact electrode is mainly based on the evaporation method.However,this method has the disadvantages of high equipment price and waste of electrode materials.Ohmic contact electrode AuGeNi/Au of n-type GaAs was prepared by ion sputtering.By optimizing the preparation process,the electrode layer with smooth surface,uniform composition and no segregation can be obtained.After annealing at 400℃in argon atmosphere,the Schottky contact between the electrode and GaAs changes to ohmic contact,and the resistance between two electrodes decreases to 1/20 of the original.Choosing the appropriate annealing temperature(400℃to 500℃),a small contact resistivity(10^(-6)Ω·cm^(2))can be obtained,which can improve the stability of the device and reduce energy consumption.The contact resistivity is higher when the annealing temperature is lower than 400℃or higher than 500℃,which is related to the fact that the ohmic contact has not yet formed and the“spheroidization”of Au-Ge alloy,respectively.The preparation method and process have the advantages of low equipment cost,simple process,saving electrode materials,good economic benefits and practical value,and are suitable for scientific research laboratories.

关 键 词：砷化镓 半导体 欧姆接触 金锗镍合金 电极材料 离子溅射 比接触电阻率 

分 类 号：TN304[电子电信—物理电子学]