光刻调焦调平测量技术的研究进展  

Research Progress of Lithography Focusing and Leveling Measurement Technology

作　　者：齐月静 裴雨多 宗明成[1,2] 李璟 陈进新 Qi Yuejing;Pei Yuduo;Zong Mingcheng;Li Jing;Chen Jinxin(Institute of Microelectronics of Chinese Academy of Sciences,Beijing 100029,China;University of Chinese Academy of Sciences,Beijing 100049,China)

机构地区：[1]中国科学院微电子研究所,北京100029 [2]中国科学院大学,北京100049

出　　处：《激光与光电子学进展》2022年第9期258-269,共12页Laser & Optoelectronics Progress

基　　金：国家科技重大专项(2017ZX02101006)。

摘　　要：光刻机利用调焦调平测量系统实现对硅片形貌的精密测量,是实现高质量曝光的关键。基于光学三角法实现硅片形貌测量的调焦调平测量技术是目前主流光刻机厂商普遍采用的技术。首先,介绍了光学三角法的测量原理和系统组成。然后,以实现高精度、高速硅片形貌测量为目标,重点分析了调焦调平测量系统的测量方式、工艺适应能力以及相适应成像探测光路涉及的关键技术及演化过程。最后,指出了调焦调平测量系统需要改进和优化之处,以应对极紫外光刻真空环境的要求。The precision measurement of morphology of wafer by focusing and leveling measurement system is the key to high-quality exposure.The focusing and leveling measurement technology based on optical triangulation is widely used to measure wafer morphology by mainstream lithography manufacturers.In this paper,first,the measurement principle and system composition based on optical triangulation is introduced.Then,aiming at realizing high-precision and high-speed wafer morphology measurement,the key technologies and their evolution process of focusing and leveling measurement system are specially analyzed around the measurement mode,process adaptability and the corresponding imaging optical path.Finally,the improvement and optimization of focusing and leveling measurement system is pointed out in order to meet the requirements of extreme ultra-violet lithography vacuum environment.

关 键 词：光学设计 光刻 调焦调平 形貌测量 工艺适应能力 极紫外光刻 

分 类 号：TN305.7[电子电信—物理电子学]