基于MIS电容器的Al_(2)O_(3)与In_(0.74)Al_(0.26)As的界面特性  

Interfacial properties between Al_(2)O_(3) and In_(0.74)Al_(0.26) As epitaxial layer on MIS capacitors

作　　者：万露红 邵秀梅[1,2] 李雪[1,2] 顾溢 马英杰 李淘[1,2] WAN Lu-Hong;SHAO Xiu-Mei;LI Xue;GU Yi;MA Ying-Jie;LI Tao(State Key Laboratories of Transducer Technology,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China;Key Laboratory of Infrared Imaging Materials and Detectors,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China;University of Chinese Academy of Sciences,Beijing 100049,China)

机构地区：[1]中国科学院上海技术物理研究所传感器技术国家重点实验室,上海200083 [2]中国科学院上海技术物理研究所红外成像材料与器件重点实验室,上海200083 [3]中国科学院大学,北京100049

出　　处：《红外与毫米波学报》2022年第2期384-388,共5页Journal of Infrared and Millimeter Waves

基　　金：Supported by National Natural Science Foundation of China(61704180,62175250)。

摘　　要：采用In_(0.74)Al_(0.26)As/In_(0.74)Ga_(0.26)As/In_(x)Al_(1-x)As异质结构多层半导体作为半导体层,制备了金属-绝缘体-半导体(MIS)电容器。其中,SiN_(x)和SiN_(x)/Al_(2)O_(3)分别作为MIS电容器的绝缘层。高分辨率透射电子显微镜和X射线光电子能谱的测试结果表明,与通过电感耦合等离子体化学气相沉积生长的SiN_(x)相比,通过原子层沉积生长的Al_(2)O_(3)可以有效地抑制Al_(2)O_(3)和In_(0.74)Al_(0.26)As界面的In2O3的含量。根据MIS电容器的电容-电压测量结果,计算得到SiN_(x)/Al_(2)O_(3)/In_(0.74)Al_(0.26)As的快界面态密度比SiN_(x)/In_(0.74)Al_(0.26)As的快界面态密度低一个数量级。因此,采用原子层沉积生长的Al_(2)O_(3)作为钝化膜可以有效地降低Al_(2)O_(3)和In_(0.74)Al_(0.26)As之间的快界面态密度,从而降低In_(0.74)Ga_(0.26)As探测器的暗电流。Metal-Insulator-Semiconductor(MIS)capacitors were fabricated on In_(0.74)Al_(0.26)As/In_(0.74)Ga_(0.26)As/In_(x)⁃Al1-xAs heterostructure multilayer semiconductor materials.SiN_(x) and SiN_(x)/Al_(2)O_(3) bilayer were applied as insulating layer to prepare MIS capacitors respectively.High-resolution transmission electron microscopy(HRTEM)and X-ray photoelectron spectroscopy(XPS)measurements indicated that,compared with SiN_(x) deposited by inductively coupled plasma chemical vapor deposition(ICPCVD),Al_(2)O_(3) deposited by atomic layer deposition(ALD)can ef⁃fectively suppresses In2O3 at the interface between Al_(2)O_(3) and In_(0.74)Al_(0.26)As.According to the capacitance-voltage(C-V)measurement result of MIS capacitors,the fast interface state density(Dit)of SiN_(x)/Al_(2)O_(3)/In_(0.74)Al_(0.26)As was one order of magnitude lower than that of SiN_(x)/In_(0.74)Al_(0.26)As.Therefore,it can be concluded that Al_(2)O_(3) deposited by ALD as a passivation film can effectively reduce the interface state density between Al_(2)O_(3) and In_(0.74)Al_(0.26)As,thereby reducing the dark current of p-In_(0.74)Al_(0.26)As/i-In_(0.76)Ga_(0.24)As/n-In_(x)Al1-xAs photodiodes.

关 键 词：INALAS 原子层沉积 Al_(2)O_(3) SiN_(x)金属-绝缘体-半导体电容器 界面态密度 

分 类 号：TB34[一般工业技术—材料科学与工程] TM53[电气工程—电器]