p-on-n长波、甚长波碲镉汞红外焦平面器件技术研究  

Research on p-on-n LWIR and VLWIR HgCdTe infrared focal plane detectors technology

作　　者：李立华[1] 熊伯俊 杨超伟[1] 李雄军[1] 万志远[1] 赵鹏[1] 刘湘云[1] LI Li-Hua;XIONG Bo-Jun;YANG Chao-Wei;LI Xiong-Jun;WAN Zhi-Yuan;ZHAO Peng;LIUXiang-Yun(Kunming Institute of Physics,Kunming 650223)

机构地区：[1]昆明物理研究所,昆明650223

出　　处：《红外与毫米波学报》2022年第3期534-539,共6页Journal of Infrared and Millimeter Waves

基　　金：红外专项项目(LZX20190302)。

摘　　要：As注入掺杂的p-on-n结构器件具有暗电流小、R_(0)A值高、少子寿命长等优点,是长波、甚长波碲镉汞红外焦平面器件发展的重要趋势。介绍了由昆明物理研究所研究制备的77 K温度下截止波长为9.5μm、10.1μm和71 K下14.97μm的p-on-n长波、甚长波碲镉汞红外焦平面器件,对器件的响应率、NETD、暗电流及R_(0)A等性能参数进行测试分析。测试结果表明,器件的有效像元率在99.78%~99.9%之间,器件的NETD均小于21 mK。实现了p-on-n长波、甚长波碲镉汞红外焦平面器件的有效制备。The p-on-n structure doped with As implantation has the advantages of low dark current,high R_(0)A product,and long minority carrier lifetime,which is an important trend in the development of long-wavelength and very longwavelength HgCdTe infrared focal plane detectors.P-on-n LWIR and VLWIR HgCdTe infrared focal plane detectors with cut-off wavelength of 9.5μm and 10.1μm at 77 K and 14.97μm at 71 K fabricated by Kunming Institute of Physics are introduced.Test and analyze performance parameters such as the responsivity,NETD,dark current and R_(0)A of the detectors.The test results show that the operability of the detectors is between 99.78%and 99.9%,and the NETD of the detectors is less than 21 mK.The effective fabrication of p-on-n LWIR and VLWIR HgCdTe infrared focal plane detectors is realized.

关 键 词：碲镉汞红外探测器 p-on-n长波器件 焦平面性能测试 NETD 暗电流 

分 类 号：TN215[电子电信—物理电子学]