铜合金自形成阻挡层制备及其性能研究  

Preparation and properties of self-forming barrier layer for copper alloy

作　　者：王晓铖 曹菲 南泽昊 WANG Xiaocheng;CAO Fei;NAN Zehao(School of Electronic Information,Hangzhou Dianzi University,Hangzhou 310018,China)

机构地区：[1]杭州电子科技大学电子信息学院,浙江杭州310018

出　　处：《应用科技》2022年第3期44-49,共6页Applied Science and Technology

基　　金：国家自然科学基金项目(61904045)。

摘　　要：随着微电子器件特征尺寸进一步缩小,传统的铜互连阻挡层技术将面临极大的挑战,为解决传统铜互连阻挡层技术阻挡扩散性能弱的问题,铜合金自形成阻挡层技术成为该领域的研究热点。本文以Cu(V)/SiO2/Si多层膜体系为研究对象,实现Cu(V)合金薄膜制备参数的优化设计。通过体系界面特性和电学特性的分析得出,溅射气压、溅射功率和靶基距这3个制备参数的变化对铜合金薄膜性质及合金体系的阻挡性能均有明显的影响。且当溅射气压为0.5 Pa、溅射功率为90 W、靶基距为60 mm时,制备的铜钒合金薄膜经退火后会自形成最优阻挡层。With the reduction of the characteristic size of microelectronic devices,traditional copper interconnect barrier technology will face great challenges,in order to solve the problem of weak blocking and diffusion performance of traditional copper interconnection barrier technology,copper alloy self-formation barrier technology has become a research hotspot in this field.The Cu(V)/SiO2/Si multilayer system is studied to optimize the preparation parameters of Cu(V)alloy films.By analysis of the interface and electrical properties of the system,it is concluded that the sputtering pressure,sputtering power and target substrate distance have obvious influence on the properties of the copper alloy films and the barrier properties of the alloy system.When the sputtering pressure is 0.5 pa,the sputtering power is 90 W and the target substrate distance is 60 mm,the best barrier layer will be formed on the self-made copper-vanadium alloy after annealing.

关 键 词：微电子器件 互连 阻挡层 漏电电流 电阻率 直流磁控溅射技术 铜合金薄膜 自形成 

分 类 号：TN401[电子电信—微电子学与固体电子学]