90nm SOI nMOSFET自加热效应研究  

Investigation of Self-Heating Effect in 90nm SOI nMOSFETs

作　　者：王娟娟 李江江[1,2] 曾传滨 李逸帆[1,2,3] 倪涛 罗家俊[1,2] 赵发展 Wang Juanjuan;Li Jiangjiang;Zeng Chuanbin;Li Yifan;Ni Tao;Luo Jiajun;Zhao Fazhan(Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China;Key Laboratory of Science and Technology on Silicon Devices,Chinese Academy of Sciences,Beijing 100029,China;University of Chinese Academy of Sciences,Beijing 100049,China)

机构地区：[1]中国科学院微电子研究所,北京100029 [2]中国科学院硅器件技术重点实验室,北京100029 [3]中国科学院大学,北京100049

出　　处：《半导体技术》2022年第5期369-372,380,共5页Semiconductor Technology

基　　金：国家自然科学基金资助项目(61804168)。

摘　　要：应用超快脉冲I-V测试系统对不同宽长比的90 nm绝缘体上硅(SOI)nMOSFET的自加热效应展开研究,根据瞬态和稳态漏源电流-漏源电压(I_(ds)-V_(ds))特性的对比结果,分析器件受自加热影响的程度。测试结果显示,宽长比为10μm/0.09μm的器件在漏源电压为1.3 V左右时才出现稳态漏源电流比瞬态值明显降低的现象,两者之差随着漏源电压的增加而增加。当漏源电压增至工作电压1.5 V时,瞬态漏源电流比稳态值高3.59%。在栅长相同的条件下,栅宽越短,自加热现象越不明显。进而发现接触孔和金属互连线是器件在测试时快速散热的关键路径,并通过温度分布的仿真结果加以证实。改变器件的环境温度,根据温度与瞬态漏源电流的测试结果计算得到宽长比为10μm/0.09μm的器件在室温条件下的沟道温升为33 K。Self-heating effects in 90 nm silicon on insulator(SOI)nMOSFETs with different aspect ratios were investigated by an ultrafast pulse I-V test system.The influence of self-heating on the devices were analyzed according to the comparison results of transient and steady drain-source current drain-source voltage(I_(ds)-V_(ds))characteristics.The test results show that the device with an aspect ratio of 10μm/0.09μm only exhibits the phenomenon that the steady drain-source current is significantly lower than the transient value when the drain-source voltage is about 1.3 V,and the difference between them increases with the increase of the drain-source voltage.The transient drain-source current is 3.59%higher than the steady value when the drain-source voltage is increased to 1.5 V.Under the condition of the same gate length,the self-heating phenomenon of the device with a shorter gate width is less significant.Contact holes and metal interconnect lines were found to be critical paths for rapid heat dissipation of the device during testing,which was confirmed by simulation results of temperature distribution.The ambient tempe-rature of the device is changed,and the channel temperature rise of the device with an aspec ratio of 10μm/0.09μm is calculated to be 33 K at room temperature according to the test results of temperature and transient drain-source current.

关 键 词：绝缘体上硅(SOI) NMOSFET 自加热效应 接触孔 金属互连线 

分 类 号：TN386.1[电子电信—物理电子学]