一种新型无电压折回现象的超结逆导型IGBT  

Novel Superjunction Reverse Conducting IGBT Without Voltage Snapback Phenomenon

作　　者：吴毅 夏云 刘超[1] 陈万军[1] WU Yi;XIA Yun;LIU Chao;CHEN Wanjun(State Key Laboratory of Electronic Thin Film and Integrated Device,University of Electronic Science and Technology of China,Chengdu 610054,China)

机构地区：[1]电子科技大学电子薄膜与集成器件国家重点实验室,成都610054

出　　处：《电子与封装》2022年第9期64-68,共5页Electronics & Packaging

摘　　要：提出了一种新型无电压折回现象的超结逆导型绝缘栅双极型晶体管(RC-IGBT),并基于Sentaurus TCAD进行了电学特性仿真。提出的超结RC-IGBT通过超结的P柱将集电极N+区域与P+区域隔开,消除了传统超结RC-IGBT正向导通时存在的折回现象。与传统超结RC-IGBT结构相比,在导通电流密度为100 A/cm^(2)时,新结构的正向导通压降减少了20.9%,反向导通压降减少了20.7%,在相同正向导通压降(1.55 V)下,新结构的关断损耗降低了19.9%。A novel superjunction reverse conducting insulated gate bipolar transistor(RC-IGBT)without snapback phenomenon is proposed,and the electrical characteristics are simulated based on Sentaurus TCAD.The proposed superjunction RC-IGBT separates the collector N+region from the P+region through the P-pillar,which eliminates the snapback phenomenon existing in the forward conduction of the conventional superjunction RC-IGBT.Compared with the conventional superjunction RC-IGBT structure,the forward conduction voltage of the new structure is reduced by 20.9%and the reverse conduction voltage of the new structure is reduced by 20.7%when the conduction current density is 100 A/cm^(2),the turn-off loss of the new structure is reduced by 19.9%under the same conduction voltage(1.55 V).

关 键 词：逆导 超结 电压折回 IGBT 导通压降 关断损耗 

分 类 号：TN303[电子电信—物理电子学]