激光雷达用大功率小发散角脉冲激光器  

High Power and Small Divergence Angle Pulse Laser for Lidar

作　　者：李亮[1,2] 李扬 彭海涛 王彦照[1] 王爽[1] 付越东 张玉明 Li Liang;Li Yang;Peng Haitao;Wang Yanzhao;Wang Shuang;Fu Yuedong;Zhang Yuming(The 13^(th) Research Institute,CETC,Shijiazhuang 050051,China;School of Microelectronics,Xidian University,Xi'an 710000,China)

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051 [2]西安电子科技大学微电子学院,西安710000

出　　处：《半导体技术》2022年第8期621-624,664,共5页Semiconductor Technology

摘　　要：研发了小发散角的900 nm波长四叠层隧道结大功率脉冲激光器芯片,设计了大出光面的四叠层材料结构。对比常规的三叠层隧道结激光器,该结构在垂直方向发散角减小的同时,斜率效率和功率均有大幅提升。采用金属有机化学气相沉积(MOCVD)方法实现外延材料的生长,通过半导体激光器制作工艺制成条宽为220μm、腔长为800μm的脉冲激光器芯片,再封装成器件并对其进行测试。测试结果表明,在25℃下,脉冲宽度为100 ns、重复频率为10 kHz、电流为50 A时,激光器输出功率可达150 W,此时远场的垂直发散角为22°。A high-power quadruple stacks tunnel junction pulse laser chip of 900 nm wavelength with small divergence angle was developed,and a quadruple material structure with large output surface was designed.Compared with the conventional triple stacks tunnel junction laser,the slope efficiency and power of the structure are greatly improved,and the vertical divergence angle is also reduced.The epitaxial material was grown by metal organic chemical vapor deposition(MOCVD)method.The pulse laser chip with the strip width of 220μm and the cavity length of 800μm was fabricated through semiconductor laser fabrication process,and then packaged into device and tested.The test results show that the output power of the laser reaches 150 W with a pulse width of 100 ns,a repetition frequency of 10 kHz and a current of 50 A at 25℃,and the vertical divergence angle of the far field is 22°.

关 键 词：四叠层 隧道结 大功率 小发散角 激光雷达 

分 类 号：TN248.4[电子电信—物理电子学]