200~220GHz平衡式高效率二倍频器  

A 200-220GHz Balanced Frequency Doubler with High Efficiency

作　　者：马春雷[1] 宋旭波[1,2] 梁士雄 顾国栋[1] 周幸叶[1,2] 冯志红 Ma Chunlei;Song Xubo;Liang Shixiong;Gu Guodong;Zhou Xingye;Feng Zhihong(The 13^(th)Research Institute,CETC,Shjiazhuang 050051,China;Science and Technology on ASIC Laboratory,Shijiazhuang 050051,China)

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051 [2]专用集成电路重点实验室,石家庄050051

出　　处：《半导体技术》2022年第10期804-808,共5页Semiconductor Technology

摘　　要：基于GaAs肖特基势垒二极管(SBD)芯片,研制了工作频率为200~220 GHz的二倍频器。采用抑制奇次谐波的平衡式电路拓扑结构以提高转换效率;采用击穿电压为-9 V的GaAs SBD并结合多阳极结结构芯片以提高输出功率;采用低阻微带线以减小波导短路面处的阻抗失配;采用三维电磁场仿真与谐波仿真结合的方法对二倍频器进行仿真。制作了二倍频器样品并对其输出功率、转换效率以及高/低温特性进行测试。测试结果表明该二倍频器在200~220 GHz的转换效率均大于10%,在215 GHz下实现了13.5 mW的输出功率和23.6%的转换效率。该二倍频器具有宽频带、高转换效率以及高/低温工作稳定等特点,可应用于下一代太赫兹通信、雷达等设备。A 200-220 GHz frequency doubler based on GaAs Schottky barrier diode(SBD) chip was developed. A balanced circuit topology was adopted to suppress the odd harmonics and realize high conversion efficiency. GaAs SBD with breakdown voltage of-9 V and multi-anode structure chip was adopted to improve output power. Low characteristic impedance microstrip line was used to reduce impedance mismatch on the shorting wall of the waveguide. 3 D electromagnetic field simulation and harmonic simulation were combined to simulate the frequency doubler. The frequency doubler sample was fabricated and the output power, conversion efficiency and high/low temperature characteristics of it were tested. Test results show that the frequency doubler has a conversion efficiency of more than 10% at 200-220 GHz, and the output power of 13.5 mW and the conversion efficiency of 23.6% at 215 GHz were achieved. The frequency doubler has the characteristics of wide bandwidth, high conversion efficiency and stable operation at high/low temperatures, so that it can be applied to the next generation THz communication, radar and other equipment.

关 键 词：太赫兹 二倍频器 肖特基势垒二极管(SBD) GAAS 转换效率 

分 类 号：TN771[电子电信—电路与系统]