碳化硅单晶位错研究进展  

Research Progress of Dislocations in SiC Single Crystal

作　　者：张家鑫[1] 彭燕[1] 陈秀芳[1] 谢雪健 杨祥龙[1] 胡小波[1] 徐现刚[1] ZHANG Jiaxin;PENG Yan;CHENG Xiufang;XIE Xuejian;YANG Xianglong;HU Xiaobo;XU Xiangang(Institute of Novel Semiconductors,Shandong University,Jinan 250100,China)

机构地区：[1]山东大学新一代半导体材料研究院,济南250100

出　　处：《人工晶体学报》2022年第11期1973-1982,共10页Journal of Synthetic Crystals

摘　　要：SiC作为代表性的第三代半导体材料,具有优异的物理化学性能。随着材料及应用的发展,SiC衬底在航天电源、电动汽车、智能电网、轨道交通、工业电机等领域的应用日益重要。相比第一代半导体材料如Si和第二代半导体材料如GaAs而言,SiC衬底质量还有很大的改善空间,是现阶段研发和产业的热点。其中SiC单晶缺陷,特别是一维位错缺陷的检测和降低,是近10年内重要的研究内容。本文重点对SiC中位错的形成原因、位错检测技术、位错密度降低方法及近年来SiC单晶中位错的优化水平进行总结归纳,并提出了SiC需要继续突破和发展的方向。As the representative of the third generation semiconductor materials, SiC has excellent physical and chemical properties. With the development of materials and applications, SiC substrates are increasingly important in aerospace power supply, electric vehicles, smart power grids, rail transit, industrial motors and other fields. Compared with the first generation of semiconductor materials such as Si and the second generation of semiconductor materials such as GaAs, the quality of SiC substrate which has a lot of room for improvement, is the current research and development and industry hot spot. The detection and reduction of SiC single crystal defects, especially one-dimensional dislocation defects, is an important research content in the last ten years. This review focuses on the formation of dislocation in SiC, dislocation detection techniques, methods of reducing dislocation density and the optimization level of dislocation in SiC single crystal in recent years. Finally, the paper puts forward the direction of SiC’s further breakthrough and development.

关 键 词：SIC 位错 位错形成原因 位错检测技术 位错密度降低方法 位错密度优化水平 

分 类 号：O772[理学—晶体学]