比导通电阻2.3 mΩ·cm^(2)的650 V,200 A碳化硅功率MOSFET器件  

A 650 V,200 A SiC Power MOSFET Device with Specific On-resistance of 2.3 mΩ·cm^(2)

作　　者：李飞飞 陈谷然[1] 应贤炜[1] 黄润华[1] 栗锐[1] 柏松[1] 杨勇 LI Feifei;CHEN Guran;YING Xianwei;HUANG Runhua;LI Rui;BAI Song;YANG Yong(State Key Laboratory of Wide-bandgap Semiconductor Power Electronic Devices,Nanjing Electronic Devices Institute,Nanjing,210016,CHN)

机构地区：[1]南京电子器件研究所,宽禁带半导体电力电子器件国家重点实验室,南京210016

出　　处：《固体电子学研究与进展》2022年第5期341-346,共6页Research & Progress of SSE

基　　金：国家重点研发计划项目(2020YFF0218500);国家自然科学基金重点项目(12035019)。

摘　　要：针对电动汽车、光伏、储能等战略性新兴产业对高可靠高效率碳化硅功率MOSFET器件的需求,开展了650 V碳化硅外延结构、芯片JFET区尺寸和掺杂等关键技术研究,研制出比导通电阻2.3 mΩ·cm^(2)的650 V、200 A碳化硅MOSFET。器件在漏极电压900 V时,漏源漏电流小于1μA;在环境温度150℃、栅极偏置电压22 V的应力条件下,经过1000 h的高温栅偏可靠性试验,阈值电压正向漂移量小于0.3 V,显示出良好的稳定性。In view of the demand of strategic emerging industries such as electric vehicles,photo-voltaic,and energy storage etc.for high reliability and high efficiency silicon carbide power MOSFET device,the research on key technology of silicon carbide epitaxial structure,chip JFET dimension and its doping profile had been carried out.A 650 V,200 A SiC MOSFET with specific on-resistance 2.3 mΩ·cm^(2)had been developed.When the drain voltage is 900 V,the drain-source leakage current is less than 1μA.Under the stress condition of 150℃ambient temperature and 22 V gate bias voltage,after 1000 hours high temperature gate-bias reliability test,the forward drift of threshold voltage is less than 0.3 V,which shows good stability.

关 键 词：碳化硅 功率MOSFET 650 V 比导通电阻 可靠性 

分 类 号：TN325.3[电子电信—物理电子学]