碳化硅功率MOSFET的阈值和开关响应的辐射损伤对比  

Comparison of Radiation Damage between Threshold Voltage and Switching Response of SiC Power MOSFET

作　　者：冯皓楠 杨圣 梁晓雯 孙静[1] 张丹[1,2] 蒲晓娟 余学峰 FENG Haonan;YANG Sheng;LIANG Xiaowen;SUN Jing;ZHANG Dan;PU Xiaojuan;YU Xuefeng(Key Laboratory of Functional Materials and Devices for Special Environments of CAS,Xinjiang Key Laboratory of Electric Information Materials and Devices,Xinjiang Technical Institute of Physics and Chemistry of CAS,Urumqi,830011,CHN;University of Chinese Academy of Sciences,Beijing,100049,CHN)

机构地区：[1]中国科学院特殊环境功能材料与器件重点实验室,新疆电子信息材料与器件重点实验室,中国科学院新疆理化技术研究所,乌鲁木齐830011 [2]中国科学院大学,北京100049

出　　处：《固体电子学研究与进展》2022年第5期412-416,共5页Research & Progress of SSE

基　　金：国家自然科学基金面上项目(11975305)。

摘　　要：对不同偏置下碳化硅VDMOS在总剂量辐射环境中的动态和静态特性进行了研究。比较了三种偏置状态下^(60)Coγ射线辐照对于SiC VDMOS器件静态参数(阈值电压)和动态参数(开关响应)的影响。实验结果表明,在经历一定时间的^(60)Coγ射线辐照过后,器件的各项静态参数发生了不同程度的退化,同时器件的开启延迟略微缩短,关断延迟骤增,总开关损耗增大。γ射线辐照导致器件静态特性退化的同时其动态特性也在改变,但两者退化规律具有一定的差异性。An experimental study of the dynamic and static characteristics of SiC VDMOS under different biases in a total ionizing dose radiation environment was presented in this paper.The effects of ^(60)Coγ-ray irradiation on the static parameters(threshold voltage)and dynamic parameters(switch-ing response)of SiC VDMOS with three bias states were compared.The experimental results show that the static parameters of the device degrade to different degrees after a certain time of ^(60)Coγ-ray irradiation.At the same time,the turn-on delay time is shortened slightly,the turn-off delay time in-creases sharply,and the total switching loss increases.γ-ray irradiation degrades the static properties of the device and changes its dynamic properties at the same time,but there is a certain difference be-tween them.

关 键 词：碳化硅 总剂量效应 静态参数 动态特性 

分 类 号：O474[理学—半导体物理] TN386.1[理学—物理]