用热反射热成像技术测量封装GaN/AlGaN HEMT芯片热阻  

Thermal Resistance of Die in Packaged GaN/AlGaN HEMT Tested by Thermoreflectance Thermography Technique

作　　者：翟玉卫[1] 张亚民 刘岩[1] 韩志国[1] 丁晨[1] 吴爱华[1] Zhai Yuwei;Zhang Yamin;Liu Yan;Han Zhiguo;Ding Chen;Wu Aihua(The 13^(th)Research Institute,CETC,Shjiazhuang 050051,China;Semiconductor Device Reliability Laboratory,Faculty of Information Technology,Beijing University of Technology,Beijing 100124,China)

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051 [2]北京工业大学信息学部新型半导体器件及可靠性研究室,北京100124

出　　处：《半导体技术》2022年第11期921-925,共5页Semiconductor Technology

摘　　要：为解决封装GaN/AlGaN高电子迁移率晶体管(HEMT)的芯片热阻难以测量的问题,提出了采用热反射热成像测温装置测量芯片热阻的方法。采用365 nm波长紫外发光二极管(LED)作为测温装置的光源测量芯片沟道区域GaN材料的温度,以近似峰值结温;采用530 nm波长可见光LED作为光源测量芯片底面金属的温度。测温过程中,采用图像配准技术和自动重聚焦技术调整由于热膨胀引起的位置偏移和离焦。对芯片底面金属测温结果进行了误差分析。最后,在4个加热功率下测量了芯片热阻,测量结果显示芯片热阻与总热阻之比超过52%。In order to solve the problem of difficulty in measuring the thermal resistance of dies in packaged GaN/AlGaN high electron mobility transistor(HEMT),a method for measuring the thermal resistance of dies using thermoreflectance thermography equipment was proposed.With 365 nm wavelength ultraviolet light emitting diode(LED)as the light source of the temperature measuring device,the temperature of the GaN material in the channel region of the die was measured to approximate the peak junction temperature,and the temperature of the die bottom metal was measured using 530 nm wavelength visible light LED as the light source.During the measurement,image registration technique and automatic refocusing technique were used to adjust the position shift and defocus caused by thermal expansion.The error-analysis for the measurement result of die bottom metal temperature was carried out.At last,the thermal resistance of the die was measured under 4 heating powers.The results show that the ratio of die thermal resistance to total thermal resistance exceeds 52%.

关 键 词：GaN/AlGaN高电子迁移率晶体管(HEMT) 热反射 沟道 结温 热阻 

分 类 号：TN307[电子电信—物理电子学]