β-Ga_(2)O_(3)晶体金刚石线锯切割的表面质量研究  

Study on Surface Quality of β-Ga_(2)O_(3) Crystal Cut by Diamond Wire Saw

作　　者：李晖[1] 高鹏程 程红娟[1] 王英民 高飞[1] 张弛[1] 王磊[1] LI Hui;GAO Pengcheng;CHENG Hongjuan;WANG Yingmin;GAO Fei;ZHANG Chi;WANG Lei(The 46th Research Institute of China Electronics Technology Corporation,Tianjin 300220,China)

机构地区：[1]中国电子科技集团公司第四十六研究所,天津300220

出　　处：《人工晶体学报》2022年第12期2040-2047,2062,共9页Journal of Synthetic Crystals

摘　　要：本文探究了往复式金刚石线锯的工艺参数对β-Ga_(2)O_(3)单晶沿(001)晶面切片时表面质量的影响,从压痕断裂力学理论角度探究了金刚石线锯切割β-Ga_(2)O_(3)单晶过程中磨粒行为和材料去除机理。实验从各向异性角度分析了切割方向对(001)面β-Ga_(2)O_(3)单晶切割片表面质量的影响,并采用SEM和SJ-210粗糙度测试仪探究了工艺参数对金刚石线锯切割后的晶片表面质量的影响。实验结果表明,增大锯丝速度或减小材料进给速度都能降低亚表面损伤层深度及表面粗糙度,有效改善晶片表面质量。In this paper, the effect of the process parameters of reciprocating diamond wire saw on the surface quality of the(001) plane β-Ga_(2)O_(3)single crystal was investigated. According to the theory of the indentation fracture mechanics, the abrasive behavior and material removal mechanism in the process of cutting β-Ga_(2)O_(3)single crystal with diamond wire saw were investigated. The influence of the cutting direction on the surface quality of the(001) plane β-Ga_(2)O_(3)single crystal was analyzed from the aspect of anisotropy, SEM and SJ-210 roughness measuring instrument were used to explore the effect of process parameters on the quality of wafer surface after diamond wire saw. The experimental results show that the depth of subsurface damage layer can be reduced and the surface quality of the wafer can be effectively improved by increasing the wire speed or decreasing the feed rate.

关 键 词：β-Ga_(2)O_(3)晶片 金刚石线锯 切割方向 亚表面损伤层 表面粗糙度 

分 类 号：TQ133.5[化学工程—无机化工]